We report the magnetotransport and thermal properties of RuAs_(2) single crystal.RuAs_(2) exhibits semiconductor behavior and localization effect.The crossover from normal state to diffusive transport in the weak loca...We report the magnetotransport and thermal properties of RuAs_(2) single crystal.RuAs_(2) exhibits semiconductor behavior and localization effect.The crossover from normal state to diffusive transport in the weak localization(WL)state and then to variable range hopping(VRH)transport in the strong localization state has been observed.The transitions can be reflected in the measurement of resistivity and Seebeck coefficient.Negative magnetoresistance(NMR)emerges with the appearance of localization effect and is gradually suppressed in high magnetic field.The temperature dependent phase coherence length extracted from the fittings of NMR also indicates the transition from WL to VRH.The measurement of Hall effect reveals an anomaly of temperature dependent carrier concentration caused by localization effect.Our findings show that RuAs_(2) is a suitable platform to study the localized state.展开更多
We report the tip-induced superconductivity on the topological semimetal NbSb_(2), similar to the observation on TaAs_(2) and NbAs_(2). Belonging to the same family of MPn_(2), all these materials possess similar band...We report the tip-induced superconductivity on the topological semimetal NbSb_(2), similar to the observation on TaAs_(2) and NbAs_(2). Belonging to the same family of MPn_(2), all these materials possess similar band structures, indicating that the tip-induced superconductivity may be closely related to their topological nature and share a common mechanism. Further analysis suggests that a bulk band should play the dominant role in such local superconductivity most likely through interface coupling. In addition, the compatibility between the induced superconductivity and tips’ ferromagnetism gives an evidence for its unconventional nature. These results provide further clues to elucidate the mechanism of the tip-induced superconductivity observed in topological materials.展开更多
Extremely large magnetoresistance(XMR)has been explored in many nonmagnetic topologically nontrivial/trivial semimetals,while it is experimentally ambiguous which mechanism should be responsible in a specific material...Extremely large magnetoresistance(XMR)has been explored in many nonmagnetic topologically nontrivial/trivial semimetals,while it is experimentally ambiguous which mechanism should be responsible in a specific material due to the complex electronic structures.In this paper,the magnetoresistance origin of single crystal CaAl4 with C2/m structure at low temperature is investigated,exhibiting unsaturated magnetoresistance of~3000%at 2.5 K and 14 T as the fingerprints of XMR materials.By the combination of ARPES and the first-principles calculations,we elaborate multiband features and anisotropic Fermi surfaces,which can explain the mismatch of isotropic two-band model.Although the structural phase transition from I4/mmm to C2/m has been recognized,the subtle impact on electronic structure is revealed by our ARPES measurements.Considering that both charge compensation and potential topologically nontrivial band structure exist in CaAl4,our findings report CaAl4 as a new reference material for exploring the XMR phenomena.展开更多
The optical, thermal and electrical properties of ultra-thin two-dimensional （2D） crystal materials are highly related to their thickness. Therefore, identifying the atomic planes of few-layer crystal materials rapi...The optical, thermal and electrical properties of ultra-thin two-dimensional （2D） crystal materials are highly related to their thickness. Therefore, identifying the atomic planes of few-layer crystal materials rapidly is crucial to fundamental study. Here, a simple technique was demonstrated based on optical contrast for counting atomic planes （n） of few-layer MoSe2 on SiO2/Si substrates. It is found that the optical contrast of single-layer MoSe2 depends on light wavelength and thickness of SiO2 on Si substrate. The data calculated based on a Fresnel law-based model as well as atomic force microscopy （AFM） mea- surements fit well with the values measured by spectro- scopic ellipsometer. Furthermore, the calculated and measured contrasts were integral and plotted, which can be used to determine the MoSe2 atomic planes （1 ≤ n ≤ 4） accurately and rapidly.展开更多
基金Project supported by the National Key Research and Development Program of China (Grant Nos.2023YFA1406500 and 2019YFA0308602)the National Natural Science Foundation of China (Grant Nos.12104011,12274388,12074425,52102333,12104010,12204004,and 11874422)the Natural Science Foundation of Anhui Province (Grant Nos.2108085QA22 and 2108085MA16)。
文摘We report the magnetotransport and thermal properties of RuAs_(2) single crystal.RuAs_(2) exhibits semiconductor behavior and localization effect.The crossover from normal state to diffusive transport in the weak localization(WL)state and then to variable range hopping(VRH)transport in the strong localization state has been observed.The transitions can be reflected in the measurement of resistivity and Seebeck coefficient.Negative magnetoresistance(NMR)emerges with the appearance of localization effect and is gradually suppressed in high magnetic field.The temperature dependent phase coherence length extracted from the fittings of NMR also indicates the transition from WL to VRH.The measurement of Hall effect reveals an anomaly of temperature dependent carrier concentration caused by localization effect.Our findings show that RuAs_(2) is a suitable platform to study the localized state.
基金Project supported by the National Key R&D Program of China(Grant Nos.2017YFA0302904,2017YFA0303201,2018YFA0305602,and 2016YFA0300604)the National Natural Science Foundation of China(Grants Nos.12074002,11574372,11674331,11804379,and 11874417)+4 种基金the National Basic Research Program of China(Grant No.2015CB921303)the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grants Nos.XDB07020300,XDB07020100,and XDB33030100)the Collaborative Innovation Program of Hefei Science Center,the Chinese Academy of Sciences(Grant No.2020HSCCIP002)CASHIPS Director’s Fund,China(Grant No.BJPY2019B03)the Recruitment Program for Leading Talent Team of Anhui Province,China(2019-16)。
文摘We report the tip-induced superconductivity on the topological semimetal NbSb_(2), similar to the observation on TaAs_(2) and NbAs_(2). Belonging to the same family of MPn_(2), all these materials possess similar band structures, indicating that the tip-induced superconductivity may be closely related to their topological nature and share a common mechanism. Further analysis suggests that a bulk band should play the dominant role in such local superconductivity most likely through interface coupling. In addition, the compatibility between the induced superconductivity and tips’ ferromagnetism gives an evidence for its unconventional nature. These results provide further clues to elucidate the mechanism of the tip-induced superconductivity observed in topological materials.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11774421, 12074425, 11874422, 11574391, and 11774424)the National Key Research and Development Program of China (Grant No. 2019YFA0308602)+1 种基金the Fundamental Research Funds for the Central Universities,Chinathe Research Funds of Renmin University of China (Grant Nos. 19XNLG13, 18XNLG14, and 19XNLG18)
文摘Extremely large magnetoresistance(XMR)has been explored in many nonmagnetic topologically nontrivial/trivial semimetals,while it is experimentally ambiguous which mechanism should be responsible in a specific material due to the complex electronic structures.In this paper,the magnetoresistance origin of single crystal CaAl4 with C2/m structure at low temperature is investigated,exhibiting unsaturated magnetoresistance of~3000%at 2.5 K and 14 T as the fingerprints of XMR materials.By the combination of ARPES and the first-principles calculations,we elaborate multiband features and anisotropic Fermi surfaces,which can explain the mismatch of isotropic two-band model.Although the structural phase transition from I4/mmm to C2/m has been recognized,the subtle impact on electronic structure is revealed by our ARPES measurements.Considering that both charge compensation and potential topologically nontrivial band structure exist in CaAl4,our findings report CaAl4 as a new reference material for exploring the XMR phenomena.
基金financially supported by the Research Funds of Renmin University of China(Nos.13XNLF02 and 14XNLQ07)the National Natural Science Foundation of China(Nos.11304381,11004245,11174366 and 51202200)
文摘The optical, thermal and electrical properties of ultra-thin two-dimensional （2D） crystal materials are highly related to their thickness. Therefore, identifying the atomic planes of few-layer crystal materials rapidly is crucial to fundamental study. Here, a simple technique was demonstrated based on optical contrast for counting atomic planes （n） of few-layer MoSe2 on SiO2/Si substrates. It is found that the optical contrast of single-layer MoSe2 depends on light wavelength and thickness of SiO2 on Si substrate. The data calculated based on a Fresnel law-based model as well as atomic force microscopy （AFM） mea- surements fit well with the values measured by spectro- scopic ellipsometer. Furthermore, the calculated and measured contrasts were integral and plotted, which can be used to determine the MoSe2 atomic planes （1 ≤ n ≤ 4） accurately and rapidly.
基金supported by the National Key Research and Development Program of China(2019YFA0307900)the National Natural Science Foundation of China(12172047,92163101,11804023)+1 种基金Beijing Natural Science Foundation(Z190011)China Postdoctoral Science Foundation(2018M641205)。
