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Characterization of CIAE developed double-sided silicon strip detector for charged particles 被引量:1
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作者 Xin-Xing Xu Fanurs C.E.Teh +17 位作者 Cheng-Jian Lin Jenny Lee Feng Yang Zhao-Qiao guo tian-shu guo Li-Jie Sun Xin-Zhi Teng Jia-Jian Liu Peng-Jie Li Peng-Fei Liang Lei Yang Nan-Ru Ma Hui-Ming Jia Dong-Xi Wang Sylvain Leblond Taras Lokotko Qing-Qing Zhao Huan-Qiao Zhang 《Nuclear Science and Techniques》 SCIE CAS CSCD 2018年第5期98-103,共6页
A double-sided silicon strip detector(DSSD)with active area of 48 mm x 48 mm and thickness of300μm has been developed. Each side of DSSD consists of48 strips, each with width of 0.9 mm and inter-strip separation of 0... A double-sided silicon strip detector(DSSD)with active area of 48 mm x 48 mm and thickness of300μm has been developed. Each side of DSSD consists of48 strips, each with width of 0.9 mm and inter-strip separation of 0.1 mm. Electrical properties and detection performances including full depletion bias voltage, reverse leakage current, rise time, energy resolution and cross talk have been studied. At a bias of 80 V, leakage current in each strip is less than 15 nA, and rise time for alpha particle at 5157 keV is approximately 15 ns on both sides.Good energy resolutions have been achieved with0.65-0.80% for the junction strips and 0.85-1.00% for the ohmic strips. The cross talk is found to be negligible on both sides. The overall good performance of DSSD indicates its readiness for various nuclear physics experiments. 展开更多
关键词 Double-sided silicon STRIP DETECTOR P-stop Detection performance Cross TALK
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