Emergency Treatment and Nursing Care of a Patient with Multiple Injuries and Right Main Bronchus Rupture

Objective: To investigate the rescue and nursing process of a trauma patient with multiple injuries and rupture of the right main bronchus. Methods: A patient with multiple injuries and rupture of the right main bronchus admitted to the emergency department of the Shenzhen Hospital of the University of Hong Kong was selected as the research object on December 11, 2019. Results: In this case, the medical team treated the patient under the guidance of ATLS (Advanced Traumatic Life Support), and for the first time in our department, we used bronchoscopy to replace the double-lumen endotracheal tube for left lung single-lung ventilation, finally the patient was successfully treated. Conclusion: Through a literature search, it is found that the main bronchus rupture is less common in clinical practice. In the trauma group, the use of fiberoptic bronchoscopy and the replacement of a double-lumen tracheal tube for left lung single-lung ventilation can improve the treatment rate of such patients and is worthy of clinical application.

Bi2O2Se纳米带的气-液-固生长与高性能晶体管的构筑

作为一种具有高迁移率、高空气稳定性和带隙可调的二维材料,纳米硒氧化铋(Bi2O2Se)半导体有望成为未来电子学集成器件和光电子集成器件沟道材料的候选半导体。高质量的Bi2O2Se纳米带有望用于高性能晶体管的构筑;然而,其一维结构的合成方法尚未开发。在我们的研究中,我们在云母衬底上通过Bi催化汽-液-固生长机制合成了一维Bi2O2Se纳米带。合成的Bi2O2Se单晶纳米带的宽度为100 nm到20μm,长度可达亚毫米。再者,Bi2O2Se纳米带可以很容易地利用洁净转移方法被转移到Si O2/Si衬底上,并进一步制备成高性能场效应器件。Bi2O2Se纳米带场效应器件表现出优异的电学性质:室温电子迁移率高达~220 cm2·V-1·s-1,开关比高达>106,10μm沟道长度下电流密度高达~42μA·μm-1。由此说明,Bi2O2Se纳米带有望成为候选材料用于未来高性能晶体管的构筑。

Structural characteristics and implication on tectonic evolution of the Daerbute strike-slip fault in West Junggar area, NW China

The Daerbute fault zone, located in the northwestern margin of the Junggar basin, in the Central Asian Orogenic Belt, is a regional strike-slip fault with a length of 400 km. The NE-SW trending Daerbute fault zone presents a distinct linear trend in plain view, cutting through both the Zair Mountain and the Hala＇alate Mountain. Because of the intense contraction and shearing, the rocks within the fault zone experienced high degree of cataclasis, schistosity, and mylonization, resulting in rocks that are easily eroded to form a valley with a width of 300- 500 m and a depth of 50-100 m after weathering and erosion. The well-exposed outcrops along the Daerbute fault zone present sub-horizontal striations and sub-vertical fault steps, indicating sub-horizontal shearing along the observed fault planes. Flower structures and horizontal drag folds are also observed in both the well-exposed outcrops and high-resolution satellite images. The distribution of accommodating strike-slip splay faults, e.g., the 973-pluton fault and the Great Jurassic Trough fault, are in accordance with the Riedel model of simple shear. The seismic and time-frequency electromagnetic （TFEM） sections also demonstrate the typical strike-slip characteristics of the Daerbute fault zone. Based on detailed field observations of well-exposed outcrops and seismic sections, the Daerbute fault can be subdivided into two segments： the western segment presents multiple fault cores and damage zones, whereas the eastern segment only presents a single fault core, in which the rocks experienced a higher degree of rock cataclasis, schistosity, and mylonization. In the central overlapping portion between the two segments, the sediments within the fault zone are primarily reddish sandstones, conglomerates, and some mudstones, of which the palynological tests suggest middle Permian as the timing of deposition. The deformation timing of the Daerbute fault was estimated by integrating the depocenters＇ basinward migration and initiation of the splay faults （e.g., the Great Jurassic Trough fault and the 973-pluton fault）. These results indicate that there were probably two periods of faulting deformation for the Daerbute fault. By integrating our study with previous studies, we speculate that the Daerbute fault experienced a two-phase strike-slip faulting deformation, commencing with the initial dextral strike-slip faulting in mid-late Permian, and then being inversed to sinistral strike-slip faulting since the Triassic. The results of this study can provide useful insights for the regional tectonics and local hydrocarbon exploration.

Small GTPase Rab40C is upregulated by 20-hydroxyecdysone and insulin pathways to regulate ovarian development and fecundity

The insulin and 20-hydroxyecdysone(20E)pathways coordinately regulate in-sect vitellogenesis and ovarian development.However,the detailed molecular mechanisms such as the genes mediating the cooperation of the interaction of these 2 pathways in reg-ulating insect reproductive development are not well understood.In the present study,a small GTPase,Rab4oC,was identified from the notorious agricultural pest Bactrocera dorsalis.In addition to the well-known RAB domain,it also has a unique SOCS-box do-main,which is different from other Rab-GTPases.Moreover,we found that Rab40C was enriched in the ovaries of sexually mature females.RNA interference(RNAi)-mediated knockdown of BdRab40C resulted in a decrease in vitellogenin synthesis,underdevel-oped ovaries,and low fertility.Furthermore,depletion of insulin receptor InR or the het-erodimer receptor of 20E(EcRor USP)by RNAi significantlydecreased the transcription of BdRab40C and resulted in lower fecundity.Further studies revealed that the transcrip-tion of BdRab40C could be upregulated by the injection of insulin or 20E.These results indicate that Rab40C participates in the insulin and 20E pathways to coordinately regulate reproduction in B.dorsalis.Our results not only provide new insights into the insulin-and 20E-stimulated regulatory pathways controlling female reproduction in insects but also contribute to the development of potential eco-friendly strategies for pest control.

Direct generation of 3.17 mJ green pulses in a cavity-dumped Ho^(3+)-doped fiber laser at 543 nm

High-energy pulsed lasers in the green spectral region are of tremendous interest for applications in space laser ranging,underwater detection,precise processing,and scientific research.Semiconductor pulsed lasers currently are difficult to access to the so-called“green gap,”and high-energy green pulsed lasers still heavily rely on the nonlinear frequency conversion of near-IR lasers,precluding compact and low-cost green laser systems.Here,we address this challenge by demonstrating,for the first time to the best of our knowledge,millijoule-level green pulses generated directly from a fiber laser.The green pulsed fiber laser consists of a 450 nm pump laser diode,a Ho^(3+)-doped ZBLAN fiber,and a cavity-dumping module based on a visible wavelength acousto-optic modulator.Stable pulse operation in the cavity-dumping regime at 543 nm is observed with a tunable repetition rate in a large range of 100 Hz–3 MHz and a pulse duration of 72–116 ns.The maximum pulse energy of 3.17 mJ at 100 Hz is successfully achieved,which is three orders of magnitude higher than those of the rare-earth-doped fiber green lasers previously reported.This work provides a model for compact,high-efficiency,and high-energy visible fiber pulsed lasers.

Direct generation of watt-level yellow Dy^(3+)-doped fiber laser

Yellow lasers(∼565–590 nm)are of tremendous interest in biomedicine,astronomy,spectroscopy,and display technology.So far,yellow lasers still have relied heavily on nonlinear frequency conversion of near-infrared lasers,precluding compact and low-cost yellow laser systems.Here,we address the challenge through demonstrating,for the first time,to the best of our knowledge,watt-level high-power yellow laser generation directly from a compact fiber laser.The yellow fiber laser simply consists of a Dy^(3+)-doped ZBLAN fiber as gain medium,a fiber end-facet mirror with high reflectivity at yellow and a 450-nm diode laser as the pump source.We comprehensively investigated the dependence of the yellow laser performance on the output coupler reflectivity and the gain fiber length and demonstrated that the yellow fiber laser with an output coupler reflectivity of 4% and a gain fiber length of∼1.8 m yields a maximum efficiency of 33.6%.A maximum output power of 1.12 W at 575 nm was achieved at a pump power of 4.20 W.This work demonstrated the power scaling of yellow Dy^(3+)-doped ZBLAN fiber lasers,showing their promise for applications in ophthalmology,astronomical exploration,and high-resolution spectroscopy.

Exploitation of Bi2O2Se/graphene van der Waals heterojunction for creating efficient photodetectors and short-channel field-effect transistors

The formation of heterojunction within solid-state devices enables them with eventually high performances,but provides a challenge for material synthesis and device fabrication because strict conditions such as lattice match are needed.Herein,we show a facile method to fabricate a van der Waals(vdW)heterojunction between two-dimensional(2D)bismuth oxyselenide(Bi2O2Se)and graphene,during which the graphene is directly transferred to the Bi2O2Se and served as a lowcontract-resistant electrode with small work function mismatch(~50 meV).As an optoelectronic device,the Bi2O2Se/graphene vdW heterojunction allows for the efficient sensing toward 1200-nm incident laser.Regarding the application of fieldeffect transistors(FETs),the short-channel(50 nm)sample can be synthesized by utilizing these two 2D materials(ie,channel:Bi2O2Se;drain/source terminal:graphene)and the n-type characteristic can be observed with the accordant field modulation.It is confirmed that we show a simple way to prepare the vdW heterojunction which is aiming to the high-performance applications among optoelectronics and FETs.

2D Bi_(2)O_(2)Se:An Emerging Material Platform for the Next-Generation Electronic Industry

CONSPECTUS:Silicon has been the dominant semiconductor for the microelectronics industry since the late 1950s.Following Moore’s law,silicon-based integrated circuit(IC)technology evolved into a 5 nm node by the end of 2020.However,silicon-based electronics face various challenges such as reduced carrier mobility and increased short-channel effects at sub-10 nm nodes.To overcome these drawbacks,two-dimensional(2D)semiconductors are among the most competitive candidate materials for next-generation electronics,due to their intrinsic atomic thickness,flexibility,and dangling-bond-free surfaces.Among all the 2D semiconductors,an air-stable and high-mobility 2D Bi_(2)O_(2)Se semiconductor,a novel ternary material,has some prominent advantages that make it particularly favorable in the electronics industry.First,it demonstrates ultrahigh carrier mobility,moderate band gap,outstanding stability,and excellent mechanical properties.Second,it can react with oxygen plasma or oxygen at elevated temperatures to form a high-κnative oxide Bi2SeO5.The native oxide Bi2SeO5 forms an atomically sharp interface with Bi_(2)O_(2)Se and can directly serve as a gate dielectric.Bi_(2)O_(2)Se is also embodied with some interesting physical properties such as strong spin−orbit coupling,dimerized selenium vacancies,and ferroelectricity.Taking advantage of these properties,researchers have fabricated high-performance electronic devices,including logic devices,optoelectronics,thermoelectrics,sensors,and memory devices.In this account,we will systematically review the structure of 2D Bi_(2)O_(2)Se,including its crystal structure,surface structure,point defects,and electronic band structure and how these structures can affect the electron transport in 2D Bi_(2)O_(2)Se.We will then discuss different approaches to synthesize this material including chemical vapor deposition(CVD),metal−organic chemical vapor deposition(MOCVD),molecular beam epitaxy(MBE),and the solution-assisted method.All these methods show great potential in large-scale production.Third,we will discuss how the structure of Bi_(2)O_(2)Se affects its chemical and physical properties such as chemical reactivity and ferroelectric,piezoelectric,and electromechanical properties.Fourth,we will talk about how to make use of these properties in electronic devices,including field-effect transistors,logic gates,bolometers,photodetectors,thermoelectrics,piezoelectrics,sensors,and memory devices.Finally,we will put forward our idea on how to pattern large-area Bi_(2)O_(2)Se thin films into isolated channel regions and integrate these devices together into full-functioning circuits.We believe that 2D Bi_(2)O_(2)Se is a promising semiconductor,as a great diversity of high-performance 2D Bi_(2)O_(2)Se-based devices have demonstrated.Hopefully,the unique characteristics of 2D Bi_(2)O_(2)Se can provide additional opportunities to complement or replace silicon as the material platform of the next-generation electronics industry.To fill the gap between dreams and reality,there is still much work to be done,especially in large-scale material synthesis and systematic device integration.