Effects of Supplemental Amount of Tuanfeng Lotus Seed Powder on Quality of Silver Carp Surimi Products

[Objectives]This study was conducted to improve the gel properties of freshwater surimi and its products. [Methods] Tuanfeng lotus seed powder was added to frozen silver carp, and the relationship between the addiamount of Tuanfeng lotus seed powder(1%, 2%, 3%, 4% and 5%) and the quality of surimi products was studied, so as to improve the quality of surimi products. [Results] The water holding capacity(86.71%±0.36%), hardness(3 566.64±51.15) g, chewiness(2 697.16±15.81) g and gel strength(692.54±23.19) of surimi products increased to the maximums when the addition amount of lotus seed powder was 3%. Meanwhile, the cooking loss rate was reduced to the minimum(13.00%±0.17%), and the sensory quality was the best, although the whiteness of surimi products decreased slightly with the increase of Tuanfeng lotus seed powder. Therefore, the quality of silver carp surimi products could be improved obviously when the dosage of Tuanfeng lotus seed powder was 3%. [Conclusions] This study provides more new ideas for improving the quality of silver carp surimi products, and simultaneously makes the development of lotus seed food more diversified.

Passively Q-switched diode-pumped Tm,Ho:LuVO4 laser with a black phosphorus saturable absorber

We presented a passively Q-switched(PQS) diode-pumped c-cut Tm, Ho:LuVO_4 laser with a black phosphorus saturable absorber for the first time.Under PQS mode, an average output power of 0.86 W and a peak power of 2.32 W were acquired from the Tm, Ho:LuVO4 laser with the pump power of 14.55 W, corresponding to a pulse width of 2.89 μs,a pulse repetition rate of 71.84 kHz, and a pulse energy of about 6.70 μJ.

Configurable circular-polarization-dependent optoelectronic silent state for ultrahigh light ellipticity discrimination

Filterless light-ellipticity-sensitive optoelectronic response generally has low discrimination,thus severely hindering the development of monolithic polarization detectors.Here,we achieve a breakthrough based on a configurable circular-polarization-dependent optoelectronic silent state created by the superposition of two photoresponses with enantiomerically opposite ellipticity dependences.The zero photocurrent and the significantly suppressed noise of the optoelectronic silent state singularly enhance the circular polarization extinction ratio(CPER)and the sensitivity to light ellipticity perturbation.The CPER of our device approaches infinity by the traditional definition.The newly established CPER taking noise into account is 3-4 orders of magnitude higher than those of ordinary integrated circular polarization detectors,and it remains high in an expanded wavelength range.The noise equivalent light ellipticity difference goes below 0.009° Hz-1/2 at modulation frequencies above 1000 Hz by a light power of 281 uW.This scheme brings a leap in developing monolithic ultracompact circular polarization detectors.

MBE Growth and Characterization of Strained Hg Te(111)Films on CdTe/GaAs

Strained Hg Te thin films are typical three-dimensional topological insulator materials.Most works have focused on Hg Te(100)films due to the topological properties resulting from uniaxial strain.In this study,strained Hg Te(111)thin films are grown on Ga As(100)substrates with Cd Te(111)buffer layers using molecular beam epitaxy(MBE).The optimal growth conditions for Hg Te films are determined to be a growth temperature of 160℃and an Hg/Te flux ratio of 200.The strains of Hg Te films with different thicknesses are investigated by highresolution x-ray diffraction,including reciprocal space mapping measurements.The critical thickness of Hg Te(111)film on Cd Te/Ga As is estimated to be approximately 284 nm by Matthews'equations,consistent with the experimental results.Reflection high-energy electron diffraction and high-resolution transmission electron microscopy investigations indicate that high-quality Hg Te films are obtained.This exploration of the MBE growth of Hg Te(111)films provides valuable information for further studies of Hg Te-based topological insulators.

High strength and deformation stability achieved in CrCoNi alloy containing deformable oxides

Hard secondary phases usually strengthen alloys at the expense of ductility.In this work,we made a dual-phase CrCoNi-O alloy containing a face centered cubic matrix and chromium oxide.On one side,the dispersed chromium oxide nano-particles impeded dislocation movement and increased the strength of the alloy.On another side,the spreading lattice distortion in CrCoNi-O high entropy solution locally relieved the severe interfacial mismatch and led to nanoscale variation of interfacial strain at the matrix-oxide interface,which facilitated dislocations’transmission from one phase to another.Consequently,unlike the strong but brittle oxide nanoparticles used before,the oxide phase here can afford significant dislocation activities during material’s plastic deformation.Comparing the mechanical properties of CrCoNi-O alloys with and without chromium oxide particles,it was found that the yield strength of the dual-phase samples was twice of the single phase CrCoNi-O alloy and strong strain hardening was obtained with ultra-high deformation stability.High density of nanotwins formed in dual-phase samples under high stress,resulting in significant strain hardening according to the well-known twinning-induced plasticity(TWIP)effect.Our results shed light on optimizing the combination of strength and plasticity of compounds by modulating the variation of interfacial strain field based on the spreading lattice distortion.

Effects of Nitrogen Doping on Microstructures and Irradiation Resistance of Ti-Zr-Nb-V-Mo Refractory High-Entropy Alloy

Interstitial strengthening with nitrogen(N)is one of the effective ways to improve the mechanical properties of HEAs,but the effects of N on the microstructures and mechanical properties of the irradiated HEAs have not been studied extensively.Here,the microstructures and mechanical properties of N-free and N-doped Ti_(2)ZrNbV_(0.5)Mo_(0.2)HEAs before and after He irradiation were investigated.The results showed that the solid solution strengthening caused by interstitial N improved the yield strength at room temperature and 1023 K without significantly reducing plasticity.N doping significantly promoted the growth,aggregation and wider spatial distribution of He bubbles by enhancing the mobility of He atoms/He-vacancy complexes,with the average size of He bubbles increasing from 10.4 nm in N-free HEA to 31.0 nm in N-doped HEA.In addition,N-doped HEA showed a much higher irradiation hardness increment and hardening fraction than N-free HEA.Contrary to conventional materials doped with N,the introduction of N into Ti_(2)ZrNbV_(0.5)Mo_(0.2)HEA had adverse effects on its resistance to He bubble growth and irradiation hardening.The results of this study indicated that N doping may not improve the irradiation resistance of HEAs.

Photonic slide rule with metasurfaces

As an elementary particle,a photon that carries information in frequency,polarization,phase,and amplitude,plays a crucial role in modern science and technology.However,how to retrieve the full information of unknown photons in.an ultracompact manner over broad bandwidth remains a challenging task with growing importance.Here,we demonstrate a versatile photonic slide rule based on an ll-silicon metasurface that enables uS to reconstruct incident photons'frequency and polarization state.The underlying mechanism relies on the coherent interactions of frequency-driven phase diagrams which rotate at various angular velocities within broad bandwidth.The rotation direction and speed are determined by the topological charge and phase dispersion.Specificall,our metasurface leverages both achromatically focusing and azimuthally evolving phases with topological charges+1 and-1 to ensure the confocal annular intensity ditributions.The combination of geometric phase and interference holography allows the joint manipulations of two distinct group delay coverages to realize angle-resolved in-pair spots in a.transverse manner-a behavior that would disperse along longitudinal direction in conventional implementations.The spin-orbital coupling between the incident photons and vortex phases provides routing for the simultaneous identifcation of the photons'frequency and circular polarization state through recognizing the spots'locations.Our work provides an analog of the conventional slide rule to flexibly characterize the photons in an ultracompact and multifunctional way and may find applications in integrated optical circuits or pocketable devices.

Enhanced antibacterial behavior of a novel Cu-bearing high-entropy alloy

Contact infection of bacteria and viruses has been a critical threat to human health. The worldwideoutbreak of COVID-19 put forward urgent requirements for the research and development of the selfantibacterial materials, especially the antibacterial alloys. Based on the concept of high-entropy alloys, thepresent work designed and prepared a novel Co_(0.4)FeCr_(0.9)Cu_(0.3) antibacterial high-entropy alloy with superior antibacterial properties without intricate or rigorous annealing processes, which outperform the antibacterial stainless steels. The antibacterial tests presented a 99.97% antibacterial rate against Escherichiacoli and a 99.96% antibacterial rate against Staphylococcus aureus after 24 h. In contrast, the classic antibacterial copper-bearing stainless steel only performed the 71.50% and 80.84% antibacterial rate, respectively. The results of the reactive oxygen species analysis indicated that the copper ion release and theimmediate contact with copper-rich phase had a synergistic effect in enhancing antibacterial properties.Moreover, this alloy exhibited excellent corrosion resistance when compared with the classic antibacterialstainless steels, and the compression test indicated the yield strength of the alloy was 1015 MPa. Thesefindings generate fresh insights into guiding the designs of structure-function-integrated antibacterial alloys.

Pristine PN junction toward atomic layer devices

In semiconductor manufacturing,PN junction is formed by introducing dopants to activate neighboring electron and hole conductance.To avoid structural distortion and failure,it generally requires the foreign dopants localize in the designated micro-areas.This,however,is challenging due to an inevitable interdiffusion process.Here we report a brand-new junction architecture,called"layer PN junction",that might break through such limit and help redefine the semiconductor device architecture.Different from all existing semiconductors,we find that a variety of van der Waals materials are doping themselves from n-to p-type conductance with an increasing/decreasing layer-number.It means the capability of constructing homogeneous PN junctions in monolayers'dimension/precision,with record high rectification-ratio(>10^(5))and low cut-off current(<1 pA).More importantly,it spawns intriguing functionalities,like gate-switchable-rectification and noise-signal decoupled avalanching.Findings disclosed here might open up a path to develop novel nanodevice applications,where the geometrical size becomes the only critical factor in tuning charge-carrier distribution and thus functionality.

Ductile and ultrahigh-strength eutectic high-entropy alloys by large-volume 3D printing

1.Introduction Additive manufacturing or 3D printing outweighs conventional casting methods in the aspect of complex parts fabrication,which can realize one-step formation without the need of complicated cast dies.3D printing significantly promotes industrial production for making near-net shaped components.However,this promising technique is not always ideally applicable for metals and alloys.For example,titanium alloys prepared by 3D printing often suf-fer from poor plasticity,and usually require further complex heat treatment or hot isostatic pressing treatment,in order to remove internal stress and regulate plasticity and strength[1,2],which de-feats the original intention of employing additive manufacturing.One of the fundamental causes for such issues is the low fluidity of the alloys upon melting,leading to great chemical heterogeneity,high porosity content and residual stresses.This limitation hinders further design and fabrication of high-performance printable alloys from large scale production and application.