Memristive devices are an emerging new type of devices operating at the scale of a few or even single atoms.They are currently used as storage elements and are investigated for performing in-memory and neuromorphic co...Memristive devices are an emerging new type of devices operating at the scale of a few or even single atoms.They are currently used as storage elements and are investigated for performing in-memory and neuromorphic computing.Amongst these devices,Ag/amorphous-SiO_(x)/Pt memristors are among the most studied systems,with the electrically induced filament growth and dynamics being thoroughly investigated both theoretically and experimentally.In this paper,we report the observation of a novel feature in these devices:The appearance of new photoluminescent centers in SiO_(x) upon memristive switching,and photon emission correlated with the conductance changes.This observation might pave the way towards an intrinsically memristive atomic scale light source with applications in neural networks,optical interconnects,and quantum communication.展开更多
文摘Memristive devices are an emerging new type of devices operating at the scale of a few or even single atoms.They are currently used as storage elements and are investigated for performing in-memory and neuromorphic computing.Amongst these devices,Ag/amorphous-SiO_(x)/Pt memristors are among the most studied systems,with the electrically induced filament growth and dynamics being thoroughly investigated both theoretically and experimentally.In this paper,we report the observation of a novel feature in these devices:The appearance of new photoluminescent centers in SiO_(x) upon memristive switching,and photon emission correlated with the conductance changes.This observation might pave the way towards an intrinsically memristive atomic scale light source with applications in neural networks,optical interconnects,and quantum communication.
