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Seismic retrofi tting of RC columns with RC jackets and wing walls with different structural details 被引量:2
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作者 Shuenn-Yih Chang ting-wei chen +1 位作者 Ngoc-Cuong Tran Wen-I Liao 《Earthquake Engineering and Engineering Vibration》 SCIE EI CSCD 2014年第2期279-292,共14页
An original reinforced concrete(RC) column and four strengthened specimens, two with RC jackets and two with wing walls, were tested in this study. The original column specimen was designed to comply with older(pre-19... An original reinforced concrete(RC) column and four strengthened specimens, two with RC jackets and two with wing walls, were tested in this study. The original column specimen was designed to comply with older(pre-1999) design standards so that the usual detailing defi ciencies in existing school buildings in Taiwan could be simulated. Two different structural details were chosen to fabricate the full-scale specimens for each retrofi tting technique. The study confi rmed that either RC jacketing or the installation of wing walls with two different structural details can effectively improve the stiffness and strength of an existing column. RC jacketing shows a better improvement in energy dissipation and ductility when compared to the columns with wing walls installed. This is because the two RC jacketed columns experienced a fl exural failure, while a shear failure was found in the two columns with the wing walls installed, and thus led to a drastic decrease of the maximum lateral strengths and ductility. Since many factors may affect the installation of a post-installed anchor, it is better to use standard hooks to replace post-installed anchors in some specifi c points when using RC jacketing or installing wing walls. 展开更多
关键词 RC jacketing installing wing wall seismic retrofi t non-ductile details post-installed anchors
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面向材料挤出成型增材制造的自适应丝宽研究(英文)
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作者 Jun WANG ting-wei chen +1 位作者 Yu-an JIN Yong HE 《Journal of Zhejiang University-Science A(Applied Physics & Engineering)》 SCIE EI CAS CSCD 2019年第1期73-82,共10页
目的:材料挤出成型增材制造技术在成形质量与加工效率方面仍有很大的提升空间。本文通过探究成形过程中的关键参数(打印速度和施加气压)对挤出丝宽的影响,研究实现可变丝宽的方法,提出自适应丝宽在提升工艺方面的应用,从而提高该工艺的... 目的:材料挤出成型增材制造技术在成形质量与加工效率方面仍有很大的提升空间。本文通过探究成形过程中的关键参数(打印速度和施加气压)对挤出丝宽的影响,研究实现可变丝宽的方法,提出自适应丝宽在提升工艺方面的应用,从而提高该工艺的适用性。创新点:1.通过实验与物理模型结合的方法,推导关键参数与丝宽的函数关系;2.基于增材制造技术的工艺特点,提出自适应丝宽在该工艺中的典型应用。方法:1.通过物理模型分析与数学推导,构建挤出丝宽与关键过程参数的函数关系,得到众多过程参数中对丝宽影响最为显著的两个参数;2.通过实验分析与对比,对构建的数学模型进行验证;3.提出自适应可变丝宽的实现方法及典型应用的实施方案。结论:1.挤出成型增材制造技术可以通过参数调节获得可控的挤出丝宽;2.两大关键工艺参数与丝宽之间存在关联函数;3.运用自适应可变丝宽可以提高工艺的适用性。 展开更多
关键词 挤出成型 工艺参数 可变丝宽 典型应用
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Ferroelastic-strain-induced multiple nonvolatile resistance states in GeTe/Pb(Mg_(1/3)Nb_(2/3))O_(3)-PbTiO_(3) heterostructures
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作者 Zhi-Xue Xu Jian-Min Yan +7 位作者 Meng Xu ting-wei chen Lei Guo Guan-Yin Gao Xiao-Guang Li Hao-Su Luo Yu Wang Ren-Kui Zheng 《Journal of Materiomics》 SCIE EI 2018年第4期412-417,共6页
We prepared 300-nm GeTe thin films on(111)-oriented and piezoelectrically active 0.71 Pb(Mg_(1/3)Nb_(2/3))O_(3)-0.29PbTiO_(3)(PMN-0.29 PT)single-crystal substrates by the pulsed laser deposition and investigated the e... We prepared 300-nm GeTe thin films on(111)-oriented and piezoelectrically active 0.71 Pb(Mg_(1/3)Nb_(2/3))O_(3)-0.29PbTiO_(3)(PMN-0.29 PT)single-crystal substrates by the pulsed laser deposition and investigated the effects of in situ electric-field-controllable non-180ferroelastic domain switching of the PMN-0.29 PT on the electronic properties of the GeTe films.The in-plane strain of the PMN-0.29 PT could be modulated continuously and reversibly by electric fields in a nonvolatile manner and could be effectively transferred to the GeTe films.Based on this,we realized reversible and nonvolatile resistance switching and obtained multilevel stable nonvolatile resistance states with good stability and endurance at T=300 K by applying appropriate asymmetrical bipolar electric fields to the PMN-0.29 PT(111)substrates along the thickness direction.Such heterostructures may be used for multilevel data storage that allows each unit to store multiple bits of information and thus improve the memory density.Our investigation would be beneficial for the fabrication of nonvolatile memory devices using PMN-xPT-based heterostructures. 展开更多
关键词 Ferroelastic strain Electronic transport PMN-PT Heterostructure Strain effect
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