We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures.Detaile...We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures.Detailed optical analysis of the characteristic emission spectrum from the monolayer islands is performed,and the main transmission is shown to act as a bright,stable,and fast single-photon emitter with a wavelength of~400 nm.展开更多
基金supported by the National Key R&D Program of China(No.2018YFB0406601)the Science Challenge Project(No.TZ2016003-2),NSAF(No.U1630109)+4 种基金the Beijing Outstanding Young Scientist Program(No.BJJWZYJH0120191000103),NSFC-DFG(GZ1309)the National Natural Science Foundation of China(Nos.61734001 and 61521004)KAKENHI Grants-in-Aid for Specially Promoted Research(Nos.15H05700,17K14655,and 19K15039)of the Japan Society for the Promotion of Sciencethe Takuetsu program of the Ministry of Education,culture,sports,Science and Technology,Japanby financial support from the program of the China Scholarship Council.
文摘We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures.Detailed optical analysis of the characteristic emission spectrum from the monolayer islands is performed,and the main transmission is shown to act as a bright,stable,and fast single-photon emitter with a wavelength of~400 nm.
