Electronic Instability of Kagome Metal CsV_(3)Sb_(5) in the 2×2×2 Charge Density Wave State

Recently discovered kagome metals AV_(3)Sb_(5)(A=K,Rb,and Cs)provide an ideal platform to study the correlation among nontrivial band topology,unconventional charge density wave(CDW),and superconductivity.The evolution of electronic structures associated with the change of lattice modulations is crucial for understanding of the CDW mechanism,with the combination of angle-resolved photoemission spectroscopy(ARPES)measurements and density functional theory calculations,we investigate how band dispersions change with the increase of lattice distortions.In particular,we focus on the electronic states around M point,where the van Hove singularities are expected to play crucial roles in the CDW transition.Previous ARPES studies reported a spectral weight splitting of the van Hove singularity around M point,which is associated with the 3D lattice modulations.Our studies reveal that this“splitting”can be connected to the two van Hove singularities at k_(z)=0 and k_(z)=π/c in the normal states.When the electronic system enters into the CDW state,both van Hove singularities move down.Such novel properties are important for understanding of the CDW transition.

Tailoring of Bandgap and Spin-Orbit Splitting in ZrSe_(2) with Low Substitution of Ti for Zr

Tuning the bandgap in layered transition metal dichalcogenides(TMDCs) is crucial for their versatile applications in many fields. The ternary formation is a viable method to tune the bandgap as well as other intrinsic properties of TMDCs, because the multi-elemental characteristics provide additional tunability at the atomic level and advantageously alter the physical properties of TMDCs. Herein, ternary Ti_(x)Zr_(1-x)Se_(2) single crystals were synthesized using the chemical-vapor-transport method. The changes in electronic structures of ZrSe_(2) induced by Ti substitution were revealed using angle-resolved photoemission spectroscopy. Our data show that at a low level of Ti substitution, the bandgap of Ti_(x)Zr_(1-x)Se_(2) decreases monotonically, and the electronic system undergoes a transition from a semiconducting to a metallic state without a significant variation of dispersions of valence bands. Meanwhile, the size of spin-orbit splitting dominated by Se 4p orbitals decreases with the increase of Ti doping. Our work shows a convenient way to alter the bandgap and spin-orbit coupling in TMDCs at the low level of substitution of transition metals.

Persistence of charge density wave against variation of band structures in V_(x)Ti_(1−x)Se_(2)(x=0–0.1)

Charge density wave(CDW)is a phenomenon that occurs in materials,accompanied by changes in their intrinsic electronic properties.The study of CDW and its modulation in materials holds tremendous significance in materials research,as it provides a unique approach to controlling the electronic properties of materials.TiSe_(2) is a typical layered material with a CDW phase at low temperatures.Through V substitution for Ti in TiSe_(2),we tuned the carrier concentration in V_(x)Ti_(1-x)Se_(2) to study how its electronic structures evolve.Angle-resolved photoemission spectroscopy(ARPES)shows that the band-folding effect is sustained with the doping level up to 10%,indicating the persistence of the CDW phase,even though the band structure is strikingly different from that of the parent compound TiSe_(2).Though CDW can induce the band fold effect with a driving force from the perspective of electronic systems,our studies suggest that this behavior could be maintained by lattice distortion of the CDW phase,even if band structures deviate from the electron-driven CDW scenario.Our work provides a constraint for understanding the CDW mechanism in TiSe_(2),and highlights the role of lattice distortion in the band-folding effect.