Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors forthin film ALD TaN were synthesized andcharacterized. Vapor pressure and thermal stabilityof these precursors were studied. From the vaporpressure analysis, it was found that TBTEMT has ahigher vapor pressure than any other published liq-uid TaN precursor, including TBTDET,TAITMATA,and IPTDET. Thermal stability of the alkyl groupson the precursors was investigated using a 1H NMRtechnique. The results indicated that the tert-butylimino group is the most stable group onTBTDET and TBTEMT as compared to thedialkylamido groups. Thermal stability of TaN pre-cursors decreased in the following order: TBTDET> PDMAT > TBTEMT. In conclusion, precursor va-por pressure and thermal stability were tuned bymaking slight variations in the ligand sphere aroundthe metal center.

TaN薄膜原子层淀积(英文)

我们成功合成了TaN薄膜原子层淀积的高纯有机钽先驱物并使其特性化,同时对这些先驱物的汽压和热稳定性进行了研究。根据汽压分析发现,TBTEMT比所有其它已发表的液体TaN先驱物(包括TBTDET、TAITMATA和IPTDET)具有更高的汽压。用1HNMR技术研究了这些烷基先驱物的热稳定性。结果表明,与乙二烯基先驱物相比,对于TBTDET和TBTEMT材料,特丁基群是最稳定的基群。TaN先驱物热稳定性按以下次序下降:TBTDET>PDMAT>TBTEMT。最后,通过对金属中央周围的配合基体进行轻微的调整使先驱物汽压和热稳定性处于良好的状态。