The boron-vacancy spin defect(V_(B)^(-))in hexagonal boron nitride(hBN)has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale pro...The boron-vacancy spin defect(V_(B)^(-))in hexagonal boron nitride(hBN)has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale proximity to the quantum sensing layer.Here,we apply first-principles calculations to determine the coupling of the VB electronic spin to strain and electric fields.Our work unravels the interplay between local piezoelectric and elastic effects contributing to the final response to the electric fields.The theoretical predictions are then used to analyse optically detected magnetic resonance(ODMR)spectra recorded on hBN crystals containing different densities of V_(B)^(-) centres.We prove that the orthorhombic zero-field splitting parameter results from local electric fields produced by surrounding charge defects.This work paves the way towards applications of V_(B)^(-) centres for quantitative electric field imaging and quantum sensing under pressure.展开更多
基金This work was supported by the National Excellence Programme for the project of Quantum-coherent materials(NKFIH Grant no.KKP129866)the Ministry of Culture and Innovation and the National Research,Development and Innovation Office within the Quantum Information National Laboratory of Hungary(Grant no.2022-2.1.1-NL-2022-00004)+2 种基金the French Agence Nationale de la Recherche under the programme ESR/EquipEx+(Grant no.ANR-21-ESRE-0025)the Institute for Quantum Technologies in Occitanie through the project BONIQs and Qfoil.Support for hBN crystal growth is provided by the Office of Naval Research,awards numbers N00014-22-1-2582 and N00014-20-1-2474The neutron irradiation was supported by the U.S.Department of Energy,Office of Nuclear Energy under DOE Idaho Operations Office Contract DE-AC07-051D14517 as part of a Nuclear Science User Facilities experiment.We acknowledge the support of The Ohio State University Nuclear Reactor Laboratory and the assistance of Susan M.White,Lei Raymond Cao,Andrew Kauffman,and Kevin Herminghuysen for the irradiation services provided.We acknowledge the high-performance computational resources provided by KIFÜ(Governmental Agency for IT Development)Institute of Hungary.
文摘The boron-vacancy spin defect(V_(B)^(-))in hexagonal boron nitride(hBN)has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale proximity to the quantum sensing layer.Here,we apply first-principles calculations to determine the coupling of the VB electronic spin to strain and electric fields.Our work unravels the interplay between local piezoelectric and elastic effects contributing to the final response to the electric fields.The theoretical predictions are then used to analyse optically detected magnetic resonance(ODMR)spectra recorded on hBN crystals containing different densities of V_(B)^(-) centres.We prove that the orthorhombic zero-field splitting parameter results from local electric fields produced by surrounding charge defects.This work paves the way towards applications of V_(B)^(-) centres for quantitative electric field imaging and quantum sensing under pressure.
