Graphene has demonstrated its potential in several practical applications owing to its remarkable electronic and physical properties. In this study, we successfully fabricated a suspended graphene device with a width ...Graphene has demonstrated its potential in several practical applications owing to its remarkable electronic and physical properties. In this study, we successfully fabricated a suspended graphene device with a width down to 20 nm. The morphological evolution of graphene under various electric field effects was systematically examined using an in-situ transmission electron microscope （TEM）. The hourglass-shaped graphene sample instantly broke apart at 7.5 mA, indicating an impressive breakdown current density. The current-carrying capacity was calculated to be -1.6 × 10^9 A.cm-2, which is several orders higher than that of copper. The current-carrying capacity depended on the resistivity of graphene. In addition, atomic volume changes occurred in the multilayer graphene samples due to surface diffusion and Ostwald ripening （OR）, indicating that the breakdown mechanism is well approximated by the electric field. This study not only provides a theory to explain the breakdown behavior but also presents the effects on materials contacted with a graphene layer used as the transmission path.展开更多
Electric-induced resistive switching effects have attracted wide attention for future nonvolatile memory applications known as resistive random access memory(RRAM).RRAM is one of the promising candidates because of it...Electric-induced resistive switching effects have attracted wide attention for future nonvolatile memory applications known as resistive random access memory(RRAM).RRAM is one of the promising candidates because of its excellent properties including simple device structure,high operation speed,low power consumption and high density integration.The RRAM devices pri-marily utilize different resistance values to store the digital data and can keep the resistance state without any power.Recent advances in the understanding of the resistive switching mechanism are described by a thermal or electrochemical redox reaction near the interface between the oxide and the active metal electrode.This paper reviews the ongoing research and development activities on the interface engineering of the RRAM devices.The possible switching mechanisms for the bistable resistive switching are described.The effects of formation,composition and thickness of the interface layer on the resistive switching characteristics and consequently the memory performance are also discussed.展开更多
文摘Graphene has demonstrated its potential in several practical applications owing to its remarkable electronic and physical properties. In this study, we successfully fabricated a suspended graphene device with a width down to 20 nm. The morphological evolution of graphene under various electric field effects was systematically examined using an in-situ transmission electron microscope （TEM）. The hourglass-shaped graphene sample instantly broke apart at 7.5 mA, indicating an impressive breakdown current density. The current-carrying capacity was calculated to be -1.6 × 10^9 A.cm-2, which is several orders higher than that of copper. The current-carrying capacity depended on the resistivity of graphene. In addition, atomic volume changes occurred in the multilayer graphene samples due to surface diffusion and Ostwald ripening （OR）, indicating that the breakdown mechanism is well approximated by the electric field. This study not only provides a theory to explain the breakdown behavior but also presents the effects on materials contacted with a graphene layer used as the transmission path.
文摘Electric-induced resistive switching effects have attracted wide attention for future nonvolatile memory applications known as resistive random access memory(RRAM).RRAM is one of the promising candidates because of its excellent properties including simple device structure,high operation speed,low power consumption and high density integration.The RRAM devices pri-marily utilize different resistance values to store the digital data and can keep the resistance state without any power.Recent advances in the understanding of the resistive switching mechanism are described by a thermal or electrochemical redox reaction near the interface between the oxide and the active metal electrode.This paper reviews the ongoing research and development activities on the interface engineering of the RRAM devices.The possible switching mechanisms for the bistable resistive switching are described.The effects of formation,composition and thickness of the interface layer on the resistive switching characteristics and consequently the memory performance are also discussed.
