The n-type conductive BaNb_(0.3) Ti_(0.7)O_(3) thin films were grown on SrTiO_(3) (001) substrates by computer-controlled laser molecular beam epitaxy. The BaNb0.3Ti0.7O3 films with (001) orientation are epitaxially g...The n-type conductive BaNb_(0.3) Ti_(0.7)O_(3) thin films were grown on SrTiO_(3) (001) substrates by computer-controlled laser molecular beam epitaxy. The BaNb0.3Ti0.7O3 films with (001) orientation are epitaxially grown on SrTiO_(3) substrates, as confirmed by x-ray diffraction techniques. The root-mean-square surface roughness of the deposited thin films is measured to be 0.24 nm by atomic force microscopy. The resistivity, carrier concentration and mobility of the BaNb_(0.3)Ti_(0.7)O_(3) thin film are 5.9 × 10^(-4) Ω. cm, 1.8 × 10^(21)cm^(-3) and 10. 7cm^(2).V^(-1).s^(-1) at room temperature,respectively, which are the best values in Nb-doped BaTiO3 thin films reported so far to our knowledge.展开更多
文摘The n-type conductive BaNb_(0.3) Ti_(0.7)O_(3) thin films were grown on SrTiO_(3) (001) substrates by computer-controlled laser molecular beam epitaxy. The BaNb0.3Ti0.7O3 films with (001) orientation are epitaxially grown on SrTiO_(3) substrates, as confirmed by x-ray diffraction techniques. The root-mean-square surface roughness of the deposited thin films is measured to be 0.24 nm by atomic force microscopy. The resistivity, carrier concentration and mobility of the BaNb_(0.3)Ti_(0.7)O_(3) thin film are 5.9 × 10^(-4) Ω. cm, 1.8 × 10^(21)cm^(-3) and 10. 7cm^(2).V^(-1).s^(-1) at room temperature,respectively, which are the best values in Nb-doped BaTiO3 thin films reported so far to our knowledge.
