Nanophotonic waveguides are at the core of a great variety of optical sensors.These structures confine light along defined paths on photonic chips and provide light-matter interaction via an evanescent field.However,w...Nanophotonic waveguides are at the core of a great variety of optical sensors.These structures confine light along defined paths on photonic chips and provide light-matter interaction via an evanescent field.However,waveguides still lag behind free-space optics for sensitivity-critical applications such as trace gas detection.Short optical pathlengths,low interaction strengths,and spurious etalon fringes in spectral transmission are among the main reasons why on-chip gas sensing is still in its infancy.In this work,we report on a mid-infrared integrated waveguide sensor that successfully addresses these drawbacks.This sensor operates with a 107%evanescent field confinement factor in air,which not only matches but also outperforms free-space beams in terms of the per-length optical interaction.Furthermore,negligible facet reflections result in a flat spectral background and record-low absorbance noise that can finally compete with free-space spectroscopy.The sensor performance was validated at 2.566μm,which showed a 7 ppm detection limit for acetylene with only a 2 cm long waveguide.展开更多
We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward...We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a Vπ· L of 0.47 V · cm. Driven by a 2.5 Vpp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.展开更多
基金This work was supported by the European Research Council(grant no.758973)the Research Council of Norway(grant no.262608)+2 种基金Tromso Research Foundation(project ID 17_SG_JJ)the Norwegian PhD Network on Nanotechnology for Microsystems(contract no 221860/F60)EPSRC SPFS Programme grant(EP/L00044X/1)。
文摘Nanophotonic waveguides are at the core of a great variety of optical sensors.These structures confine light along defined paths on photonic chips and provide light-matter interaction via an evanescent field.However,waveguides still lag behind free-space optics for sensitivity-critical applications such as trace gas detection.Short optical pathlengths,low interaction strengths,and spurious etalon fringes in spectral transmission are among the main reasons why on-chip gas sensing is still in its infancy.In this work,we report on a mid-infrared integrated waveguide sensor that successfully addresses these drawbacks.This sensor operates with a 107%evanescent field confinement factor in air,which not only matches but also outperforms free-space beams in terms of the per-length optical interaction.Furthermore,negligible facet reflections result in a flat spectral background and record-low absorbance noise that can finally compete with free-space spectroscopy.The sensor performance was validated at 2.566μm,which showed a 7 ppm detection limit for acetylene with only a 2 cm long waveguide.
基金Engineering and Physical Sciences Research Council(EPSRC)(EP/N00762X/1,EP/N013247/1,EP/R004951/1)Royal Academy of Engineering(RF201617/16/33)+6 种基金National Research Foundation Singapore(NRF)(NRFCRP12-2013-04)Royal Society(UF150325)European Project Cosmicc(H2020-ICT-27-2015-688516)China Scholarship Council(CSC)State Key Laboratory of Advanced Optical Communication Systems and Networks,ChinaEuropean Research Council under the European Union’s Seventh Framework Programme(FP7/2007-2013)H2020 European Research Council(ERC)(291216)
文摘We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a Vπ· L of 0.47 V · cm. Driven by a 2.5 Vpp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance.