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Extraordinary evanescent field confinement waveguide sensor for mid-infrared trace gas spectroscopy 被引量:16
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作者 Marek Vlk Anurup Datta +4 位作者 Sebastián Alberti Henock Demessie Yallew vinita mittal Ganapathy Senthil Murugan Jána Jagerská 《Light(Science & Applications)》 SCIE EI CAS CSCD 2021年第2期147-153,共7页
Nanophotonic waveguides are at the core of a great variety of optical sensors.These structures confine light along defined paths on photonic chips and provide light-matter interaction via an evanescent field.However,w... Nanophotonic waveguides are at the core of a great variety of optical sensors.These structures confine light along defined paths on photonic chips and provide light-matter interaction via an evanescent field.However,waveguides still lag behind free-space optics for sensitivity-critical applications such as trace gas detection.Short optical pathlengths,low interaction strengths,and spurious etalon fringes in spectral transmission are among the main reasons why on-chip gas sensing is still in its infancy.In this work,we report on a mid-infrared integrated waveguide sensor that successfully addresses these drawbacks.This sensor operates with a 107%evanescent field confinement factor in air,which not only matches but also outperforms free-space beams in terms of the per-length optical interaction.Furthermore,negligible facet reflections result in a flat spectral background and record-low absorbance noise that can finally compete with free-space spectroscopy.The sensor performance was validated at 2.566μm,which showed a 7 ppm detection limit for acetylene with only a 2 cm long waveguide. 展开更多
关键词 WAVEGUIDE ordinary FIELD
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Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm 被引量:5
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作者 TIANTIAN LI MILOS NEDELJKOVIC +12 位作者 NANNICHA HATTASAN WEI CAO ZHIBO QU CALLUM GLITTLEJOHNS JORDI SOLER PENADES LORENZO MASTRONARDI vinita mittal DANIEL BENEDIKOVIC DAVID JTHOMSON FREDERIC YGARDES HEQUAN WU ZHIPING ZHOU GORAN ZMASHANOVICH 《Photonics Research》 SCIE EI CSCD 2019年第8期828-836,共9页
We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward... We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and8 μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of >35 dB with a 7 V forward bias at 3.8 μm, and a similar 1-mm-long Mach–Zehnder modulator has a Vπ· L of 0.47 V · cm. Driven by a 2.5 Vpp RF signal, 60 MHz on-off keying modulation was demonstrated. Electro-absorption modulation at 8 μm was demonstrated preliminarily, with the device performance limited by large contact separation and high contact resistance. 展开更多
关键词 PIN frame EAM Ge-on-Si modulators
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