The influence of thermal treatment on the lux-ampere characteristics of polycrystalline films from the CdSe<sub>x</sub>S<sub>1-x</sub> solid solution obtained by the method of thermal evaporati...The influence of thermal treatment on the lux-ampere characteristics of polycrystalline films from the CdSe<sub>x</sub>S<sub>1-x</sub> solid solution obtained by the method of thermal evaporation in a vacuum has been investigated. It is shown that at low illumination intensities L μ of electrons increases with a power law μ ~ L<sup>γ</sup>, first with the exponent γ > 1, then with γ ≈ 0.5, and their concentration n almost does not change. Starting from the intensity L > 12 - 15 lx, the electron concentration increases strongly n ~ L<sup>β</sup> from β ≈ 3.0, and the parameters n and μ reach relatively high values ~(10<sup>15</sup> - 10<sup>16</sup>) sm<sup>-3</sup> and ~(150 - 200) sm<sup>2</sup>/V·s, however further, at L > 50 lx, a weak dependence of n(L) and μ(L) with β, γ < 1.0 is found. The obtained experimental results are interpreted on the basis of a model of a semiconductor film with intergranular potential barriers when the concentration and barrier mechanisms of photoconductivity operate simultaneously.展开更多
文摘The influence of thermal treatment on the lux-ampere characteristics of polycrystalline films from the CdSe<sub>x</sub>S<sub>1-x</sub> solid solution obtained by the method of thermal evaporation in a vacuum has been investigated. It is shown that at low illumination intensities L μ of electrons increases with a power law μ ~ L<sup>γ</sup>, first with the exponent γ > 1, then with γ ≈ 0.5, and their concentration n almost does not change. Starting from the intensity L > 12 - 15 lx, the electron concentration increases strongly n ~ L<sup>β</sup> from β ≈ 3.0, and the parameters n and μ reach relatively high values ~(10<sup>15</sup> - 10<sup>16</sup>) sm<sup>-3</sup> and ~(150 - 200) sm<sup>2</sup>/V·s, however further, at L > 50 lx, a weak dependence of n(L) and μ(L) with β, γ < 1.0 is found. The obtained experimental results are interpreted on the basis of a model of a semiconductor film with intergranular potential barriers when the concentration and barrier mechanisms of photoconductivity operate simultaneously.
