A method for fabricating deep grating structures on a silicon carbide （SIC） surface by a femtosecond laser and chemical-selective etching is developed. Periodic lines corresponding to laser-induced structure change ...A method for fabricating deep grating structures on a silicon carbide （SIC） surface by a femtosecond laser and chemical-selective etching is developed. Periodic lines corresponding to laser-induced structure change （LISC） are formed by femtosecond laser irradiation, and then the SiC material in the LISC zone is removed by a mixed solution of hydrofluoric acid and nitric acid to form grating grooves. Grating grooves with a high-aspect ratio of approximately 25 are obtained. To obtain a small grating period, femtosecond laser exposure through a phase mask was used to fabricate grating structures with a 1.07 μm period on the surface of the SiC.展开更多
基金supported by the Collaborative Innovation Center of Suzhou Nano Science and Technologysupported by the National Basic Research Program of China (No.2012CB921804)+1 种基金the National Natural Science Foundation of China (Nos.11204236 and 61308006)The SEM work was done at the International Center for Dielectric Research (ICDR),Xi’an Jiaotong University,Xi’an,China
文摘A method for fabricating deep grating structures on a silicon carbide （SIC） surface by a femtosecond laser and chemical-selective etching is developed. Periodic lines corresponding to laser-induced structure change （LISC） are formed by femtosecond laser irradiation, and then the SiC material in the LISC zone is removed by a mixed solution of hydrofluoric acid and nitric acid to form grating grooves. Grating grooves with a high-aspect ratio of approximately 25 are obtained. To obtain a small grating period, femtosecond laser exposure through a phase mask was used to fabricate grating structures with a 1.07 μm period on the surface of the SiC.
