The studies of the influence of pico-second (4 × 10<sup>-13</sup> sec.) pulse electron irradiation with energy of 3.5 MeV on the electrical-physical properties of silicon crystals (n-Si) are presented...The studies of the influence of pico-second (4 × 10<sup>-13</sup> sec.) pulse electron irradiation with energy of 3.5 MeV on the electrical-physical properties of silicon crystals (n-Si) are presented. It is shown that in spite of relatively low electron irradiation energy, induced radiation defects are of cluster type. The behavior of main carrier mobility depending on temperature and irradiation dose is analyzed and charge carriers’ scattering mechanisms are clarified: on ionized impurities, on point radiation defects with transition into cluster formation. Dose dependencies of electrical conductivity and carrier mobility for samples of various specific resistivities are given.展开更多
文摘The studies of the influence of pico-second (4 × 10<sup>-13</sup> sec.) pulse electron irradiation with energy of 3.5 MeV on the electrical-physical properties of silicon crystals (n-Si) are presented. It is shown that in spite of relatively low electron irradiation energy, induced radiation defects are of cluster type. The behavior of main carrier mobility depending on temperature and irradiation dose is analyzed and charge carriers’ scattering mechanisms are clarified: on ionized impurities, on point radiation defects with transition into cluster formation. Dose dependencies of electrical conductivity and carrier mobility for samples of various specific resistivities are given.
