Metal–oxide–semiconductor field-effect transistor(MOSFET)faces the major problem of being unable to achieve a subthreshold swing(SS)below 60 mV/dec.As device dimensions continue to reduce and the demand for high swi...Metal–oxide–semiconductor field-effect transistor(MOSFET)faces the major problem of being unable to achieve a subthreshold swing(SS)below 60 mV/dec.As device dimensions continue to reduce and the demand for high switching ratios for low power consumption increases,the tunnel field-effect transistor(TFET)appears to be a viable device,displaying promising characteristic as an answer to the shortcomings of the traditional MOSFET.So far,TFET designing has been a task of sacrificing higher ON state current for low subthreshold swing(and vice versa),and a device that displays both while maintaining structural integrity and operational stability lies in the nascent stages of popular research.This work presents a comprehensive analysis of a heterojunction plasma doped gate-all-around TFET(HPD-GAA-TFET)by making a comparison between Mg_(2)Si and Si which serve as source materials.Charge plasma technique is employed to implement doping in an intrinsic silicon wafer with the help of suitable electrodes.A low-energy bandgap material,i.e.magnesium silicide is incorporated as source material to form a heterojunction between source and silicon-based channel.A rigorous comparison of performance between Si-based GAA-TFET and HPD-GAA-TFET is conducted in terms of electrical,radio frequency(RF),linearity,and distortion parameters.It is observable that HPD-GAA-TFET outperforms conventional Si-based GAA-TFET with an ON-state current(I_(ON)),subthreshold swing(SS),threshold voltage(V_(th)),and current switching ratio being 0.377 mA,12.660 mV/dec,0.214 V,and 2.985×10^(12),respectively.Moreover,HPD-GAA-TFET holds faster switching and is more reliable than Si-based device.Therefore,HPD-GAA-TFET is suitable for low-power applications.展开更多
A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in w...A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in which metals with specific work functions are deposited on the source region to modulate the channel conductivity,is used to provide the necessary doping for the proper functioning of the device.TCAD simulation studies of the proposed structure and junction structure have been compared,and showed an enhanced rectification of 10^(4) times.The proposed structure is designed to have a nanocavity of length 10 nm on the left-and right-hand sides of the fixed gate dielectric,which improves the biosensor capture area,and hence the sensitivity.By considering neutral and charged biomolecules with different dielectric constants,TCAD simulation studies were compared for their sensitivities.The off-state current IOFFcan be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current.Additionally,it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage.To explore the device performance when the nanogaps are fully filled,half filled and unevenly filled,extensive TCAD simulations have been run.The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.展开更多
Background/Need for innovation: Undergraduate students in Otolaryngology are on the lookout for easy modes of learning which can help them understand concepts better as well as score more in examinations. A need was h...Background/Need for innovation: Undergraduate students in Otolaryngology are on the lookout for easy modes of learning which can help them understand concepts better as well as score more in examinations. A need was hence felt to introduce a new learning resource to supplement traditional teaching-learning methods. Methods: Digital, case based self–study modules were prepared using all open source technology and validated by experts in the specialty. The modules were uploaded on a website specifically created for the purpose. They were pilot tested on twenty consenting third year undergraduate (MBBS) students using a crossover design. Post test comprising of multiple choice questions was administered to the students after a period of two weeks. Feedback was obtained from faculty and students. Results: Test scores were found to be significantly higher amongst students who used the learning modules as a supplement to regular bedside teaching (p < 0.001;Wilcoxon signed rank test). Majority of students agreed that the modules helped them gain confidence during internal assessment examinations and would help revision. Conclusions: Online, case based, self-study modules helped students to perform better when used as a supplement to traditional teaching methods. Students agreed that it enabled easy understanding of subject and helped them gain confidence.展开更多
文摘Metal–oxide–semiconductor field-effect transistor(MOSFET)faces the major problem of being unable to achieve a subthreshold swing(SS)below 60 mV/dec.As device dimensions continue to reduce and the demand for high switching ratios for low power consumption increases,the tunnel field-effect transistor(TFET)appears to be a viable device,displaying promising characteristic as an answer to the shortcomings of the traditional MOSFET.So far,TFET designing has been a task of sacrificing higher ON state current for low subthreshold swing(and vice versa),and a device that displays both while maintaining structural integrity and operational stability lies in the nascent stages of popular research.This work presents a comprehensive analysis of a heterojunction plasma doped gate-all-around TFET(HPD-GAA-TFET)by making a comparison between Mg_(2)Si and Si which serve as source materials.Charge plasma technique is employed to implement doping in an intrinsic silicon wafer with the help of suitable electrodes.A low-energy bandgap material,i.e.magnesium silicide is incorporated as source material to form a heterojunction between source and silicon-based channel.A rigorous comparison of performance between Si-based GAA-TFET and HPD-GAA-TFET is conducted in terms of electrical,radio frequency(RF),linearity,and distortion parameters.It is observable that HPD-GAA-TFET outperforms conventional Si-based GAA-TFET with an ON-state current(I_(ON)),subthreshold swing(SS),threshold voltage(V_(th)),and current switching ratio being 0.377 mA,12.660 mV/dec,0.214 V,and 2.985×10^(12),respectively.Moreover,HPD-GAA-TFET holds faster switching and is more reliable than Si-based device.Therefore,HPD-GAA-TFET is suitable for low-power applications.
文摘A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in which metals with specific work functions are deposited on the source region to modulate the channel conductivity,is used to provide the necessary doping for the proper functioning of the device.TCAD simulation studies of the proposed structure and junction structure have been compared,and showed an enhanced rectification of 10^(4) times.The proposed structure is designed to have a nanocavity of length 10 nm on the left-and right-hand sides of the fixed gate dielectric,which improves the biosensor capture area,and hence the sensitivity.By considering neutral and charged biomolecules with different dielectric constants,TCAD simulation studies were compared for their sensitivities.The off-state current IOFFcan be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current.Additionally,it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage.To explore the device performance when the nanogaps are fully filled,half filled and unevenly filled,extensive TCAD simulations have been run.The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.
文摘Background/Need for innovation: Undergraduate students in Otolaryngology are on the lookout for easy modes of learning which can help them understand concepts better as well as score more in examinations. A need was hence felt to introduce a new learning resource to supplement traditional teaching-learning methods. Methods: Digital, case based self–study modules were prepared using all open source technology and validated by experts in the specialty. The modules were uploaded on a website specifically created for the purpose. They were pilot tested on twenty consenting third year undergraduate (MBBS) students using a crossover design. Post test comprising of multiple choice questions was administered to the students after a period of two weeks. Feedback was obtained from faculty and students. Results: Test scores were found to be significantly higher amongst students who used the learning modules as a supplement to regular bedside teaching (p < 0.001;Wilcoxon signed rank test). Majority of students agreed that the modules helped them gain confidence during internal assessment examinations and would help revision. Conclusions: Online, case based, self-study modules helped students to perform better when used as a supplement to traditional teaching methods. Students agreed that it enabled easy understanding of subject and helped them gain confidence.
