Nanocrystalline copper oxide (CuO) thin films were deposited onto glass substrates by a spin coating technique using an aqueous solution of copper acetate. These films were characterized for their structural, mor-phol...Nanocrystalline copper oxide (CuO) thin films were deposited onto glass substrates by a spin coating technique using an aqueous solution of copper acetate. These films were characterized for their structural, mor-phological, optoelectronic properties by means of X-ray diffraction (XRD) scanning electron microscopy (SEM), UVspectroscopy and four probe method. The CuO films are oriented along (1 1 1) plane with the monoclinic crystal structure. These films were utilized in H2S sensors. The dependence of the H2S response on the operating temperature, H2S concentration of CuO film (annealed at 700。C) was investigated. The CuO film showed selectivity for H2S. The maximum H2S response of 25.2 % for the CuO film at gas concentra-tion of 100 ppm at operating temperature 200oC was achieved.展开更多
Nanocrystalline titanium oxide thin films have been deposited by spin coating technique and then have been analyzed to test their application in NH3 gas-sensing technology. In particular, spectrophotometric and con-du...Nanocrystalline titanium oxide thin films have been deposited by spin coating technique and then have been analyzed to test their application in NH3 gas-sensing technology. In particular, spectrophotometric and con-ductivity measurements have been performed in order to determine the optical and electrical properties of titanium oxide thin films. The structure and the morphology of such material have been investigated by X ray diffraction, Scanning microscopy, high resolution electron microscopy and selected area electron diffrac-tion. The X-ray diffraction measurements confirmed that the films grown by this technique have good crys-talline tetragonal mixed anatase and rutile phase structure The HRTEM image of TiO2 thin film showed grains of about 50-60 nm in size with aggregation of 10-15 nm crystallites. Selected area electron diffraction pattern shows that the TiO2 films exhibited tetragonal structure. The surface morphology (SEM) of the TiO2 film showed that the nanoparticles are fine The optical band gap of TiO2 film is 3.26 eV. Gas sensing proper-ties showed that TiO2 films were sensitive as well as fast in responding to NH3. A high sensitivity for ammo-nia indicates that the TiO2 films are selective for this gas.展开更多
Nanosized Co3O4 thin films were prepared on glass substrates by using sol-gel spin coating technique. The effect of annealing temperature (400°C - 700°C) on structural, morphological, electrical and optical ...Nanosized Co3O4 thin films were prepared on glass substrates by using sol-gel spin coating technique. The effect of annealing temperature (400°C - 700°C) on structural, morphological, electrical and optical properties of Co3O4 thin films were studied by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Electrical conductivity and UV-visible Spectroscopy (UV-Vis). XRD measurements show that all the films are nanocrystallized in the cubic spinel structure and present a random orientation. Six prominent peaks, corresponding to the (111) phase (2θ ≈ 18.90°), (220) phase (2θ ≈ 31.29°), (311) phase (2θ ≈ 36.81°), (222) phase (2θ ≈ 38.54°), (400) phase (2θ ≈ 44.80°), (511) phase (2θ ≈ 59.37°) and (440) phase (2θ ≈ 65.27°) appear on the diffractograms. The crystallite size increases with increasing annealing temperature. These modifications influence the optical properties. The morphology of the sol gel derived Co3O4 shows nanocrystalline grains with some overgrown clusters and it varies with annealing temperature. The optical band gap has been determined from the absorption coefficient. We found that the optical band gap energy decreases from 2.58 eV to 2.07 eV with increasing annealing temperature between 400°C - 700°C. These mean that the optical quality of Co3O4 films is improved by annealing. The dc electrical conductivity of Co3O4 thin films were increased from 10–4 to 10–2 (Ω.cm)–1 with increase in annealing temperature. The electron carrier concentration (n) and mobility (μ) of Co3O4 films annealed at 400°C - 700°C were estimated to be of the order of 2.4 to 4.5 × 1019 cm–3 and 5.2 to 7.0 × 10–5 cm2.V–1.s–1 respectively. It is observed that Co3O4 thin film annealing at 700°C after deposition provide a smooth and flat texture suited for optoelectronic applications.展开更多
文摘Nanocrystalline copper oxide (CuO) thin films were deposited onto glass substrates by a spin coating technique using an aqueous solution of copper acetate. These films were characterized for their structural, mor-phological, optoelectronic properties by means of X-ray diffraction (XRD) scanning electron microscopy (SEM), UVspectroscopy and four probe method. The CuO films are oriented along (1 1 1) plane with the monoclinic crystal structure. These films were utilized in H2S sensors. The dependence of the H2S response on the operating temperature, H2S concentration of CuO film (annealed at 700。C) was investigated. The CuO film showed selectivity for H2S. The maximum H2S response of 25.2 % for the CuO film at gas concentra-tion of 100 ppm at operating temperature 200oC was achieved.
文摘Nanocrystalline titanium oxide thin films have been deposited by spin coating technique and then have been analyzed to test their application in NH3 gas-sensing technology. In particular, spectrophotometric and con-ductivity measurements have been performed in order to determine the optical and electrical properties of titanium oxide thin films. The structure and the morphology of such material have been investigated by X ray diffraction, Scanning microscopy, high resolution electron microscopy and selected area electron diffrac-tion. The X-ray diffraction measurements confirmed that the films grown by this technique have good crys-talline tetragonal mixed anatase and rutile phase structure The HRTEM image of TiO2 thin film showed grains of about 50-60 nm in size with aggregation of 10-15 nm crystallites. Selected area electron diffraction pattern shows that the TiO2 films exhibited tetragonal structure. The surface morphology (SEM) of the TiO2 film showed that the nanoparticles are fine The optical band gap of TiO2 film is 3.26 eV. Gas sensing proper-ties showed that TiO2 films were sensitive as well as fast in responding to NH3. A high sensitivity for ammo-nia indicates that the TiO2 films are selective for this gas.
文摘Nanosized Co3O4 thin films were prepared on glass substrates by using sol-gel spin coating technique. The effect of annealing temperature (400°C - 700°C) on structural, morphological, electrical and optical properties of Co3O4 thin films were studied by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Electrical conductivity and UV-visible Spectroscopy (UV-Vis). XRD measurements show that all the films are nanocrystallized in the cubic spinel structure and present a random orientation. Six prominent peaks, corresponding to the (111) phase (2θ ≈ 18.90°), (220) phase (2θ ≈ 31.29°), (311) phase (2θ ≈ 36.81°), (222) phase (2θ ≈ 38.54°), (400) phase (2θ ≈ 44.80°), (511) phase (2θ ≈ 59.37°) and (440) phase (2θ ≈ 65.27°) appear on the diffractograms. The crystallite size increases with increasing annealing temperature. These modifications influence the optical properties. The morphology of the sol gel derived Co3O4 shows nanocrystalline grains with some overgrown clusters and it varies with annealing temperature. The optical band gap has been determined from the absorption coefficient. We found that the optical band gap energy decreases from 2.58 eV to 2.07 eV with increasing annealing temperature between 400°C - 700°C. These mean that the optical quality of Co3O4 films is improved by annealing. The dc electrical conductivity of Co3O4 thin films were increased from 10–4 to 10–2 (Ω.cm)–1 with increase in annealing temperature. The electron carrier concentration (n) and mobility (μ) of Co3O4 films annealed at 400°C - 700°C were estimated to be of the order of 2.4 to 4.5 × 1019 cm–3 and 5.2 to 7.0 × 10–5 cm2.V–1.s–1 respectively. It is observed that Co3O4 thin film annealing at 700°C after deposition provide a smooth and flat texture suited for optoelectronic applications.
