Zn(1-x)CdxO films have been grown on (a-plane) and (r-plane) sapphire substrate by metal organic chemical vapor deposition. A maximum cadmium incorporation of 8.5% and 11.2% has been respectively determined for films ...Zn(1-x)CdxO films have been grown on (a-plane) and (r-plane) sapphire substrate by metal organic chemical vapor deposition. A maximum cadmium incorporation of 8.5% and 11.2% has been respectively determined for films deposited on a- and r-plane sapphire. The optical transmission spectra and energy band-gap equation established by Makino et al. were used to estimate the cadmium mole fraction of the solid solutions. Structural, morphological and optical properties of these films were examined using high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and room and low temperature photoluminescence (Pl) as Cd incorporation and employed substrate. X-ray diffraction study revealed that all films had wurtzite phase but solid solution grown on a-plane sapphire are polycrystalline with a preferred orientation along the [0001] direction and a-plane film are epitaxially grown on r-plane sapphire. AFM image show significant differences between morphologies depending on orientation sapphire substrate but no significant differences on surface roughness have been found. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.916 eV for the highest Cd content (11.2%) at low temperature (20 K). The room temperature hall mobility decreases with the Cd incorporation but it is larger for Zn(1-x)CdxO grown on r-plane sapphire.展开更多
Peculiar and unique growth mechanisms involved in semiconductor nanowires(NWs)pave the way to the achievement of new crystallographic phases and remarkable material properties,and hence,studying polytypism in semicond...Peculiar and unique growth mechanisms involved in semiconductor nanowires(NWs)pave the way to the achievement of new crystallographic phases and remarkable material properties,and hence,studying polytypism in semiconductor NWs arouses a strong interest for the next generation of electronic and photonic applications.In this context,the growth of ZnS nanowires has been investigated,as bulk ZnS compound exhibits numerous unstable polytypes at high temperatures,but their stable occurrence is highly anticipated in a nanowire due to its special quasi-dimensional shape and growth modes.In this work,the idea is to provide a change in the growth mechanism via the physical state of catalyst droplet(liquid or solid)and hence,study the induced structural modifications in ZnS nanowires.The HRTEM images of VLS(via liquid alloyed catalyst)grown ZnS NWs show periodic stacking faults,which is precisely identified as a stacking sequence of cubic or hexagonal individual planes leading to an astonishing 15R crystal polymorph.This crystallographic phase is observed for the first time in nanowires.Contrastingly,NWs grown with VSS(via solid catalyst)show crystal polytypes of zinc blende and wurtzite.We calculate and discuss the role of cohesive energies in the formation of such ZnS polytypes.Further,we present the selection rules for the crystallization of such 15R structure in NWs and discuss the involved VLS and VSS growth mechanisms leading to the formation of different crystal phases.展开更多
文摘Zn(1-x)CdxO films have been grown on (a-plane) and (r-plane) sapphire substrate by metal organic chemical vapor deposition. A maximum cadmium incorporation of 8.5% and 11.2% has been respectively determined for films deposited on a- and r-plane sapphire. The optical transmission spectra and energy band-gap equation established by Makino et al. were used to estimate the cadmium mole fraction of the solid solutions. Structural, morphological and optical properties of these films were examined using high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and room and low temperature photoluminescence (Pl) as Cd incorporation and employed substrate. X-ray diffraction study revealed that all films had wurtzite phase but solid solution grown on a-plane sapphire are polycrystalline with a preferred orientation along the [0001] direction and a-plane film are epitaxially grown on r-plane sapphire. AFM image show significant differences between morphologies depending on orientation sapphire substrate but no significant differences on surface roughness have been found. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.916 eV for the highest Cd content (11.2%) at low temperature (20 K). The room temperature hall mobility decreases with the Cd incorporation but it is larger for Zn(1-x)CdxO grown on r-plane sapphire.
文摘Peculiar and unique growth mechanisms involved in semiconductor nanowires(NWs)pave the way to the achievement of new crystallographic phases and remarkable material properties,and hence,studying polytypism in semiconductor NWs arouses a strong interest for the next generation of electronic and photonic applications.In this context,the growth of ZnS nanowires has been investigated,as bulk ZnS compound exhibits numerous unstable polytypes at high temperatures,but their stable occurrence is highly anticipated in a nanowire due to its special quasi-dimensional shape and growth modes.In this work,the idea is to provide a change in the growth mechanism via the physical state of catalyst droplet(liquid or solid)and hence,study the induced structural modifications in ZnS nanowires.The HRTEM images of VLS(via liquid alloyed catalyst)grown ZnS NWs show periodic stacking faults,which is precisely identified as a stacking sequence of cubic or hexagonal individual planes leading to an astonishing 15R crystal polymorph.This crystallographic phase is observed for the first time in nanowires.Contrastingly,NWs grown with VSS(via solid catalyst)show crystal polytypes of zinc blende and wurtzite.We calculate and discuss the role of cohesive energies in the formation of such ZnS polytypes.Further,we present the selection rules for the crystallization of such 15R structure in NWs and discuss the involved VLS and VSS growth mechanisms leading to the formation of different crystal phases.
