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Performance Analysis of WDM RoF-EPON Link with and without DCF and FBG
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作者 Baljeet Kaur Ajay K. Sharma vinod kapoor 《Optics and Photonics Journal》 2013年第2期163-168,共6页
Performance of WDM ethernet passive optical network (EPON) with radio over fiber (RoF) optical link has been analyzed with the use of dispersion compensating fiber (DCF) and fiber bragg grating (FBG) to compensate the... Performance of WDM ethernet passive optical network (EPON) with radio over fiber (RoF) optical link has been analyzed with the use of dispersion compensating fiber (DCF) and fiber bragg grating (FBG) to compensate the dispersion and four wave mixing. With the use of DCF and FBG, performance of the system is improved by 77.67%. Results are compared with and without DCF + FBG for different optical power and fiber length. The BER, Q factor and eye diagrams have been obtained for evaluating the performance of the system. 展开更多
关键词 OPTICAL Network Unit OPTICAL Line TERMINATION BER EPON ROF DCF FBG
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Gate current modeling and optimal design of nanoscale non-overlapped gate to source/drain MOSFET
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作者 Ashwani K.Rana Narottam Chand vinod kapoor 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第7期14-19,共6页
A novel nanoscale MOSFET with a source/drain-to-gate non-overlapped and high-k spacer structure has been demonstrated to reduce the gate leakage current for the first time.The gate leakage behaviour of the novel MOSFE... A novel nanoscale MOSFET with a source/drain-to-gate non-overlapped and high-k spacer structure has been demonstrated to reduce the gate leakage current for the first time.The gate leakage behaviour of the novel MOSFET structure has been investigated with the help of a compact analytical model and Sentaurus simulation. A fringing gate electric field through the dielectric spacer induces an inversion layer in the non-overlap region to act as an extended S/D(source/drain) region.It is found that an optimal source/drain-to-gate non-overlapped and high-A:spacer structure has reduced the gate leakage current to a great extent as compared to those of an overlapped structure.Further,the proposed structure had improved off current,subthreshold slope and drain induced barrier lowering(DIBL) characteristics.It is concluded that this structure solves the problem of high leakage current without introducing extra series resistance. 展开更多
关键词 gate tunneling current analytical model spacer dielectrics DIBL subthreshold slope
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