To further enhance the property of piezoelectric materials is of great significance to improve the overall performance of electro-mechanical devices.Here in this work,we propose a thermal annealing and high temperatur...To further enhance the property of piezoelectric materials is of great significance to improve the overall performance of electro-mechanical devices.Here in this work,we propose a thermal annealing and high temperature poling approach to achieve significantly enhanced piezoelectricity in Pb(In_(1/2)Nb_(1/2))O_(3)single bondPb(Mg_(1/3)Nb_(2/3))O_(3)single bondPbTiO_(3)(PIN-PMN-PT)crystals with a morphotropic phase boundary(MPB)composition.The main idea of our approach is to realize a more sufficiently polarized crystal via active manipulation of defects and orientation of defect polarization.Manipulation of defect dipoles by the high temperature poling is proved by the piezo-response force microscopy.Finally,a d_(33)of 3300 pC/N and a SE of 0.25%are obtained,nearly 60%higher than that of conventionally poled crystals.Moreover,such a boosting of piezoelectric property is obtained under a maintained Curie temperature.Our research not only reveals the active control of defect dipole via modified poling method in the PIN-PMN-PT crystal,but also provides a feasible strategy to further improve the property of piezoelectric materials.展开更多
基金This work is supported by the National Nature Science Foundation of China(Grant Nos.52102143,51772239,62001369 and 51761145024)Shaanxi province project(2017ktpt-21 and 2018TD-024)Jiangxi Technological Innovation Guidance Science and Technology Plan(Grant No.S20212BDH80017)。
文摘To further enhance the property of piezoelectric materials is of great significance to improve the overall performance of electro-mechanical devices.Here in this work,we propose a thermal annealing and high temperature poling approach to achieve significantly enhanced piezoelectricity in Pb(In_(1/2)Nb_(1/2))O_(3)single bondPb(Mg_(1/3)Nb_(2/3))O_(3)single bondPbTiO_(3)(PIN-PMN-PT)crystals with a morphotropic phase boundary(MPB)composition.The main idea of our approach is to realize a more sufficiently polarized crystal via active manipulation of defects and orientation of defect polarization.Manipulation of defect dipoles by the high temperature poling is proved by the piezo-response force microscopy.Finally,a d_(33)of 3300 pC/N and a SE of 0.25%are obtained,nearly 60%higher than that of conventionally poled crystals.Moreover,such a boosting of piezoelectric property is obtained under a maintained Curie temperature.Our research not only reveals the active control of defect dipole via modified poling method in the PIN-PMN-PT crystal,but also provides a feasible strategy to further improve the property of piezoelectric materials.