InTiZnO thin-film transistors(ITZO TFTs)with Al_(2)O_(3)gate dielectrics are fabricated by magnetron sputtering at room temperature.The bottom-gate-type ITZO TFTs with amorphous Al_(2)O_(3)gate dielectrics are operate...InTiZnO thin-film transistors(ITZO TFTs)with Al_(2)O_(3)gate dielectrics are fabricated by magnetron sputtering at room temperature.The bottom-gate-type ITZO TFTs with amorphous Al_(2)O_(3)gate dielectrics are operated in the enhancement mode and exhibit a mobility of 50.4 cm^(2)/V·s,threshold voltage of 1.2 V,subthreshold swing of 94.5 mV/decade,and on/off-current ratio of 7×10^(6).We believe that ITZO deposited at room temperature is an appropriate semiconductor material to produce high-mobility TFTs for developing flexible electronic devices.展开更多
基金Supported by the Research Fund of DongEui University(2012AA189)the Natural Science Foundation of Shandong Province under Grant Nos ZR2011FM010 and ZR2012FM020.
文摘InTiZnO thin-film transistors(ITZO TFTs)with Al_(2)O_(3)gate dielectrics are fabricated by magnetron sputtering at room temperature.The bottom-gate-type ITZO TFTs with amorphous Al_(2)O_(3)gate dielectrics are operated in the enhancement mode and exhibit a mobility of 50.4 cm^(2)/V·s,threshold voltage of 1.2 V,subthreshold swing of 94.5 mV/decade,and on/off-current ratio of 7×10^(6).We believe that ITZO deposited at room temperature is an appropriate semiconductor material to produce high-mobility TFTs for developing flexible electronic devices.
