FeGa thin film has been deposited on（100）-oriented GaAs and（001）-oriented Si substrates with different film thicknesses and laser energy densities at room temperature by pulsed laser deposition system.Materials st...FeGa thin film has been deposited on（100）-oriented GaAs and（001）-oriented Si substrates with different film thicknesses and laser energy densities at room temperature by pulsed laser deposition system.Materials structure and static magnetic of FeGa film have great changes depending on the substrate and energy density of pulsed laser.X-ray diffraction reveals the presence of first-order order–disorder structure ofgrain phase and disordered bcc A2 structure on GaAs substrate.The coercivity and remanence of FeGa film on GaAs substrate ratio show a regular dependence on the thickness and energy densities.However,film on Si substrate did not exhibit structure change,which can be attributed to a large lattice mismatch between FeGa and Si.展开更多
基金financially supported by the National Youth Natural Science Foundation (nos. 61601293 and 61404085)the Yangfan Plan of Shanghai Youth Science and Technology Talents (no. 15YF408800)the National Natural Science Foundation of China (nos. 11574214, 61376010)
文摘FeGa thin film has been deposited on（100）-oriented GaAs and（001）-oriented Si substrates with different film thicknesses and laser energy densities at room temperature by pulsed laser deposition system.Materials structure and static magnetic of FeGa film have great changes depending on the substrate and energy density of pulsed laser.X-ray diffraction reveals the presence of first-order order–disorder structure ofgrain phase and disordered bcc A2 structure on GaAs substrate.The coercivity and remanence of FeGa film on GaAs substrate ratio show a regular dependence on the thickness and energy densities.However,film on Si substrate did not exhibit structure change,which can be attributed to a large lattice mismatch between FeGa and Si.
