The valence band offset(VBO)of an Al_(0.17)Ga_(0.83)N/GaN heterojunction is determined to be 0.13±0.07 eV by x-ray photoelectron spectroscopy.From the obtained VBO value,the conduction band offset(CBO)of~0.22 eV ...The valence band offset(VBO)of an Al_(0.17)Ga_(0.83)N/GaN heterojunction is determined to be 0.13±0.07 eV by x-ray photoelectron spectroscopy.From the obtained VBO value,the conduction band offset(CBO)of~0.22 eV is obtained.The results indicate that the Al_(0.17)Ga_(0.83)N/GaN heterojunction exhibits a type-Ⅰ band alignment.展开更多
基金the Knowledge Innovation Program of the Chinese Academy of Sciences under Grant No YYY-0701-02the National Natural Science Foundation of China under Grant Nos 60890193 and 61106014+2 种基金the National Basic Research Program of China under Grant Nos 2010CB327503 and 2012CB619303the High-Technology Research and Development Program of China under Grant No 2011AA050514the National Science and Technology Major Project of China。
文摘The valence band offset(VBO)of an Al_(0.17)Ga_(0.83)N/GaN heterojunction is determined to be 0.13±0.07 eV by x-ray photoelectron spectroscopy.From the obtained VBO value,the conduction band offset(CBO)of~0.22 eV is obtained.The results indicate that the Al_(0.17)Ga_(0.83)N/GaN heterojunction exhibits a type-Ⅰ band alignment.
