This article studies the role of electrochemical parameters in controlling the morphology of oxidized TiO_(2)nanotubes and the electrochemical performance of modified TiO_(2)nanotubes.Humidity is a key factor for fabr...This article studies the role of electrochemical parameters in controlling the morphology of oxidized TiO_(2)nanotubes and the electrochemical performance of modified TiO_(2)nanotubes.Humidity is a key factor for fabricating TiO_(2)nanotubes.When the relative humidity belows 70%,the TiO_(2)nanotubes can be successfully prepared.What's more,by changing the anodization voltage and time,the diameter and the length of TiO_(2)nanotubes can be adjusted.In addition,the TiO_(2)nanotubes are modified through electrochemical self-doping and loading Pt metal particles on the surface of the nanotubes,which promotes the performance of the supercapacitor.The sample anodized at 100 V for 3 h has a specific capacity of up to 2.576 mF/cm~2 at a scan rate of 100 mV/s after self-doping,and its capacity retention rate still remains at 89.55%after 5000 cycles,demonstrating excellent cycling stability.The Pt-modified sample has a specific capacity of up to 3.486 mF/cm~2 at the same scan rate,exhibiting more outstanding electrochemical performance.展开更多
Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The m...Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The microstructural,optical and electrical properties of the a-ITO film were characterized by XRD,SEM,XPS,UV-VIS spectrophotometer,four-point probe and Hall effect measurement,respectively.The electrical properties of heterojunction were investigated by I-V measurement,which reveals that the heterojunction shows strong rectifying behavior under a dark condition.The ideality factor and the saturation current density of this diode are 2.26 and 1.58×10-4 A cm-2,respectively.And the value of IF/IR(IF and IR stand for forward and reverse currents,respectively) at 1 V is found to be as high as 21.5.For the a-ITO/p-Si heterojunction solar cell,the a-ITO thin film acts not only as an emitter layer,but also as an anti-reflected coating film.The conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%,under 100 mW cm-2 illumination(AM1.5 condition).And the open-circuit voltage(Voc),short-circuit current density(J SC),filll factor(FF) are 280 mV,9.83 mA cm 2 and 39.9%,respectively.Because the ITO film deposited at low temperature is amorphous,it can effectively reduce the interface states between ITO and p-Si.The barrier height and internal electric field,which is near the surface of p-Si,can effectively be enhanced.Thus we can see the great photovoltaic effect.展开更多
基金National Natural Science Foundation of China(No.12004070)。
文摘This article studies the role of electrochemical parameters in controlling the morphology of oxidized TiO_(2)nanotubes and the electrochemical performance of modified TiO_(2)nanotubes.Humidity is a key factor for fabricating TiO_(2)nanotubes.When the relative humidity belows 70%,the TiO_(2)nanotubes can be successfully prepared.What's more,by changing the anodization voltage and time,the diameter and the length of TiO_(2)nanotubes can be adjusted.In addition,the TiO_(2)nanotubes are modified through electrochemical self-doping and loading Pt metal particles on the surface of the nanotubes,which promotes the performance of the supercapacitor.The sample anodized at 100 V for 3 h has a specific capacity of up to 2.576 mF/cm~2 at a scan rate of 100 mV/s after self-doping,and its capacity retention rate still remains at 89.55%after 5000 cycles,demonstrating excellent cycling stability.The Pt-modified sample has a specific capacity of up to 3.486 mF/cm~2 at the same scan rate,exhibiting more outstanding electrochemical performance.
基金supported by the State Key Laboratory for Modification of Chemical Fibers and Polymer Materials,Donghua University (Grant No.13M1060102)the Fundamental Research Funds for the Central Universities,China,Donghua University (Grant No. 13D110913)+5 种基金National Natural Science Foundation of China (Grant Nos. 51072034,11174048,51172042)the Cultivation Fund of the Key Scientific and Technical Innovation Project of China (Grant No. 708039)Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 201100751300-01)Science and Technology Commission of Shanghai Municipality (Grant No. 12nm0503900)the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher Learningthe Program of Introducing Talents of Discipline to Universities of China(Grant No. 111-2-04)
文摘Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar cell.The microstructural,optical and electrical properties of the a-ITO film were characterized by XRD,SEM,XPS,UV-VIS spectrophotometer,four-point probe and Hall effect measurement,respectively.The electrical properties of heterojunction were investigated by I-V measurement,which reveals that the heterojunction shows strong rectifying behavior under a dark condition.The ideality factor and the saturation current density of this diode are 2.26 and 1.58×10-4 A cm-2,respectively.And the value of IF/IR(IF and IR stand for forward and reverse currents,respectively) at 1 V is found to be as high as 21.5.For the a-ITO/p-Si heterojunction solar cell,the a-ITO thin film acts not only as an emitter layer,but also as an anti-reflected coating film.The conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%,under 100 mW cm-2 illumination(AM1.5 condition).And the open-circuit voltage(Voc),short-circuit current density(J SC),filll factor(FF) are 280 mV,9.83 mA cm 2 and 39.9%,respectively.Because the ITO film deposited at low temperature is amorphous,it can effectively reduce the interface states between ITO and p-Si.The barrier height and internal electric field,which is near the surface of p-Si,can effectively be enhanced.Thus we can see the great photovoltaic effect.
