A high etch rate GaAs via-hole process was studied in an inductively coupled plasma system using Cl2/BCl3 gas system. The effects of process parameters on the GaAs etch rate were investigated. The influences of photor...A high etch rate GaAs via-hole process was studied in an inductively coupled plasma system using Cl2/BCl3 gas system. The effects of process parameters on the GaAs etch rate were investigated. The influences of photoresist SiO2; Ni masks on the resultant profiles were also studied by scanning electron microscopy. A maximum etch rate of 8.9 μm/min was obtained; the etched profiles were optimized.展开更多
基金Supported by the National Natural Science Foundation of China (Grant No. 60506012)Beijing Education Committee Project (Grant No. KZ200510005003)+2 种基金Beijing Municipal Talented Person Education Plan Item (Grant No. 05002015200504)Beijing Municipal Scientific New-star Plan (Grant No. 2005A11)the Hi-Tech Research and Development Program of China (Grant No. 2006AA03A121)
文摘A high etch rate GaAs via-hole process was studied in an inductively coupled plasma system using Cl2/BCl3 gas system. The effects of process parameters on the GaAs etch rate were investigated. The influences of photoresist SiO2; Ni masks on the resultant profiles were also studied by scanning electron microscopy. A maximum etch rate of 8.9 μm/min was obtained; the etched profiles were optimized.
