nBn红外探测器研究进展

nBn红外探测器旨在消除肖特基-里德-霍尔产生复合电流,这将有效降低器件的暗电流并提高工作温度。由于制造工艺的兼容性和晶格匹配的衬底的存在,基于Ⅲ-Ⅴ化合物(包括二类超晶格材料)的nBn红外探测器得到了快速发展。通过理论模拟,基于HgCdTe材料的nBn红外探测器也能有效抑制暗电流。然而,去除价带势垒的困难阻碍了HgCdTe nBn器件的发展。本综述将阐述nBn探测器抑制暗电流的物理机制,并介绍nBn探测器在不同材料体系中的发展现状和趋势。

Thickening of Non-Ferroelectric Capacitive Layers with Enhanced Domain Switching Speed in Polyvinylidence Fluoride Copolymer Thin Films

The large coercive field of domain switching in poly(vinylidene fluoride-trifluoroethylene)thin films is in much part due to the contribution of nonpolar impurity phases rather than the manifestation of an intrinsic domain switching mechanism of the ferroelectric layer.We coincidentally derive the equivalent electrical capacitance for the total non-ferroelectric capacitive layers from either domain switching current transient or voltage dependence of the switched polarization.Unexpectedly,the non-ferroelectric capacitance reduces by more than 71%with the enhancement of domain switching speed spanning over 5 orders of magnitude in company with the continuous reduction of the remanent polarization,which suggests the thickening of the above capacitive layers with enhanced domain switching speed.

电缆铜导体在实际生产中的氧化及其防控措施

通过对SD公司进行长期的实地调研和相关对照实验,收集分析电缆制备过程中可能导致铜导体氧化的细节性因素,归纳为人、机、料、法、环5类,并制定相应的防控措施。电缆产品不良率推移图表明,施行氧化防控措施后,由铜导体氧化导致的产品不良率显著下降,且产品总体报废率达到公司目标(低于0.2%)。