The large coercive field of domain switching in poly(vinylidene fluoride-trifluoroethylene)thin films is in much part due to the contribution of nonpolar impurity phases rather than the manifestation of an intrinsic d...The large coercive field of domain switching in poly(vinylidene fluoride-trifluoroethylene)thin films is in much part due to the contribution of nonpolar impurity phases rather than the manifestation of an intrinsic domain switching mechanism of the ferroelectric layer.We coincidentally derive the equivalent electrical capacitance for the total non-ferroelectric capacitive layers from either domain switching current transient or voltage dependence of the switched polarization.Unexpectedly,the non-ferroelectric capacitance reduces by more than 71%with the enhancement of domain switching speed spanning over 5 orders of magnitude in company with the continuous reduction of the remanent polarization,which suggests the thickening of the above capacitive layers with enhanced domain switching speed.展开更多
基金Supported by the National key research and development program during the“14th Five-Year Plan”(2021YFA1200700)Natural Science Foundation of China(62025405 and 61835012)+1 种基金Strategic Priority Research Program of the Chinese Academy of Sciences(XDB44000000)Science and Technology Commission of Shanghai Municipality(2151103500).
基金Supported by Shanghai Key Program(1052nm07600)the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher Learning.
文摘The large coercive field of domain switching in poly(vinylidene fluoride-trifluoroethylene)thin films is in much part due to the contribution of nonpolar impurity phases rather than the manifestation of an intrinsic domain switching mechanism of the ferroelectric layer.We coincidentally derive the equivalent electrical capacitance for the total non-ferroelectric capacitive layers from either domain switching current transient or voltage dependence of the switched polarization.Unexpectedly,the non-ferroelectric capacitance reduces by more than 71%with the enhancement of domain switching speed spanning over 5 orders of magnitude in company with the continuous reduction of the remanent polarization,which suggests the thickening of the above capacitive layers with enhanced domain switching speed.