The optical waveguide was formed on an LiNbO_(3) substrate by 2.6 MeV nickel ions implantation to the dose of 9×10^(14) ions/cm^(2).Five dark modes were observed by the prism coupling technique.The refractive ind...The optical waveguide was formed on an LiNbO_(3) substrate by 2.6 MeV nickel ions implantation to the dose of 9×10^(14) ions/cm^(2).Five dark modes were observed by the prism coupling technique.The refractive index profile was obtained by using the reflectivity calculation method.A large index decrease was found in the guiding region and in the optical barrier,which is somewhat different from that of the LiNbO_(3) waveguide formed by the MeV He+ions.The position of the optical barrier is deeper than that of the damage peak calculated by TRIM'90(Transport of Ions in Matter)code.The crystal lattice damage in the guiding region caused by the Ni+ion implantation was analysed by the Rutherford backscattering/channelling technique.展开更多
The diffusion behaviour of 1.0 and 2.0MeV Au^(+)implanted into LiB_(3)O_(5)single crystal has been studied by the Rutherford backscattering of 2.1 MeV He ions.Annealing was performed at temperatures of 600,700,and 800...The diffusion behaviour of 1.0 and 2.0MeV Au^(+)implanted into LiB_(3)O_(5)single crystal has been studied by the Rutherford backscattering of 2.1 MeV He ions.Annealing was performed at temperatures of 600,700,and 800℃each for 30 min.The results show that the diffusion behaviour is quite different in two cases.In LiB_(3)O_(5),the depth distribution of the 1.0MeV Au is nearly Gaussian and becomes bimodal after annealing at 800℃for 30 min.But in the case of 2.0 MeV,the depth distribution of as implanted Au^(+)in LiB_(3)O_(5)has splitting behaviour.After 800℃for 30 min annealing,there is no obvious diffusion observed.The precise interpretation is needed.展开更多
基金Supported by the National Natural Science Foundation of China under grant No.19875032Natural Science Foundation of Shandong Province.
文摘The optical waveguide was formed on an LiNbO_(3) substrate by 2.6 MeV nickel ions implantation to the dose of 9×10^(14) ions/cm^(2).Five dark modes were observed by the prism coupling technique.The refractive index profile was obtained by using the reflectivity calculation method.A large index decrease was found in the guiding region and in the optical barrier,which is somewhat different from that of the LiNbO_(3) waveguide formed by the MeV He+ions.The position of the optical barrier is deeper than that of the damage peak calculated by TRIM'90(Transport of Ions in Matter)code.The crystal lattice damage in the guiding region caused by the Ni+ion implantation was analysed by the Rutherford backscattering/channelling technique.
基金Supported by the National Natural Science Foundation of China under Grant No.19775031,the Hong Kong University of Science and Technology Research Infracture Grant R191/92SC05Laboratory of Heavy Ion Physics,Peking University。
文摘The diffusion behaviour of 1.0 and 2.0MeV Au^(+)implanted into LiB_(3)O_(5)single crystal has been studied by the Rutherford backscattering of 2.1 MeV He ions.Annealing was performed at temperatures of 600,700,and 800℃each for 30 min.The results show that the diffusion behaviour is quite different in two cases.In LiB_(3)O_(5),the depth distribution of the 1.0MeV Au is nearly Gaussian and becomes bimodal after annealing at 800℃for 30 min.But in the case of 2.0 MeV,the depth distribution of as implanted Au^(+)in LiB_(3)O_(5)has splitting behaviour.After 800℃for 30 min annealing,there is no obvious diffusion observed.The precise interpretation is needed.
