Reactive deposition epitaxial growth ofβ-FeSi_(2) film on Si(001)has been studied by in situ observation of reflective high energy electron diffraction.Metastable strained phase was observed at initial stages.Surface...Reactive deposition epitaxial growth ofβ-FeSi_(2) film on Si(001)has been studied by in situ observation of reflective high energy electron diffraction.Metastable strained phase was observed at initial stages.Surface roughness due to the islanding was observed during the deposition.The existed great tendency to transform the alignment of the orientation of crystallites into random as the thickness of deposited iron increased.展开更多
Reactive deposition-solid phase epitaxy has been developed for the epitaxial growth of thick β-FeSi_(2) film.Compared with the solid phase epitaxy,the crystal quality was improved.The orientation relationship mainly ...Reactive deposition-solid phase epitaxy has been developed for the epitaxial growth of thick β-FeSi_(2) film.Compared with the solid phase epitaxy,the crystal quality was improved.The orientation relationship mainly depends on the depositing condition.Observation by transmission electron microscope revealed the polycrystalline nature and the mean crystallite size was about 200nm.展开更多
We report the observation of photocurrent spectrum involving both the fundamental interband,extrinsic defect transitions β-FeSi_(2) and the intrinsic transitions of Si substrate and demonstrate the sensitivity and re...We report the observation of photocurrent spectrum involving both the fundamental interband,extrinsic defect transitions β-FeSi_(2) and the intrinsic transitions of Si substrate and demonstrate the sensitivity and reliability of the photocurrent measurement for revealing the energy band structure of β-FeSi_(2).The transition energies are in good agreement with the results of absorption measurement and the theoretical calculation based on a simple recombination model.展开更多
基金Supported by the National Natural Science Foundation of Shanghai,the People's Republic of China,No.94JC14006.
文摘Reactive deposition epitaxial growth ofβ-FeSi_(2) film on Si(001)has been studied by in situ observation of reflective high energy electron diffraction.Metastable strained phase was observed at initial stages.Surface roughness due to the islanding was observed during the deposition.The existed great tendency to transform the alignment of the orientation of crystallites into random as the thickness of deposited iron increased.
基金Supported by the Natural Science Foundation of Shanghaithe People's of China,No.94JC14006.
文摘Reactive deposition-solid phase epitaxy has been developed for the epitaxial growth of thick β-FeSi_(2) film.Compared with the solid phase epitaxy,the crystal quality was improved.The orientation relationship mainly depends on the depositing condition.Observation by transmission electron microscope revealed the polycrystalline nature and the mean crystallite size was about 200nm.
文摘We report the observation of photocurrent spectrum involving both the fundamental interband,extrinsic defect transitions β-FeSi_(2) and the intrinsic transitions of Si substrate and demonstrate the sensitivity and reliability of the photocurrent measurement for revealing the energy band structure of β-FeSi_(2).The transition energies are in good agreement with the results of absorption measurement and the theoretical calculation based on a simple recombination model.
