Undoped and La-doped ZnS thin films are prepared by chemical bath deposition(CBD)process through the co-precipitation reaction of inorganic precursors zinc sulfate,thiosulfate ammonia and La_(2)O_(3).Composition of th...Undoped and La-doped ZnS thin films are prepared by chemical bath deposition(CBD)process through the co-precipitation reaction of inorganic precursors zinc sulfate,thiosulfate ammonia and La_(2)O_(3).Composition of the 61ms is analyzed using an energy-dispersive x-ray spectroscopy(EDS).Absorption spectra and spectral tra.nsmitta.nces of the 61ms are measured using a double beam UV-VIS spectrophotometer(TU-1901).It is found that significant red shifts in absorption spectra and decrease in absorptivity are obtained with increasing lanthanum.Moreover,optical transmittance is increased as La is doped,with a transmittance of more than 80%for wavelength above 360 nm in La-doped ZnS thin 61ms.Compared to pure ZnS,the band gap decreases and flat-band potential positively shifts to quasi-metal for the La-doped ZnS.These results indicate that La-doped ZnS thin 6hns could be valuably adopted as transparent electrodes.展开更多
Presented was an optimum designed CMOS active pixel sensor.In this sensor,used is a PMOSFET substituting for the NMOSFET in traditional sensor as restoration transistor.Compared with traditional active pixel sensor un...Presented was an optimum designed CMOS active pixel sensor.In this sensor,used is a PMOSFET substituting for the NMOSFET in traditional sensor as restoration transistor.Compared with traditional active pixel sensor under the same condition based on 0.25μm CMOS technology,simulating results show that the new structure device has higher signal-to-noise ratio,wider output swing,wider dynamic range and faster readout speed.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61040061.
文摘Undoped and La-doped ZnS thin films are prepared by chemical bath deposition(CBD)process through the co-precipitation reaction of inorganic precursors zinc sulfate,thiosulfate ammonia and La_(2)O_(3).Composition of the 61ms is analyzed using an energy-dispersive x-ray spectroscopy(EDS).Absorption spectra and spectral tra.nsmitta.nces of the 61ms are measured using a double beam UV-VIS spectrophotometer(TU-1901).It is found that significant red shifts in absorption spectra and decrease in absorptivity are obtained with increasing lanthanum.Moreover,optical transmittance is increased as La is doped,with a transmittance of more than 80%for wavelength above 360 nm in La-doped ZnS thin 61ms.Compared to pure ZnS,the band gap decreases and flat-band potential positively shifts to quasi-metal for the La-doped ZnS.These results indicate that La-doped ZnS thin 6hns could be valuably adopted as transparent electrodes.
基金Hunan Provincial Natural Science Foundation of China(05JJ30115)
文摘Presented was an optimum designed CMOS active pixel sensor.In this sensor,used is a PMOSFET substituting for the NMOSFET in traditional sensor as restoration transistor.Compared with traditional active pixel sensor under the same condition based on 0.25μm CMOS technology,simulating results show that the new structure device has higher signal-to-noise ratio,wider output swing,wider dynamic range and faster readout speed.
