We developed a one-dimensional hybrid model to simulate the DC/RF combined driven capacitively coupled plasma for argon discharges. The numerical results are used to analyze the influence of the DC source on the plasm...We developed a one-dimensional hybrid model to simulate the DC/RF combined driven capacitively coupled plasma for argon discharges. The numerical results are used to analyze the influence of the DC source on the plasma density distribution, ion energy distributions (IEDs) and ion angle distributions (IADs) on both the RF and DC electrodes. The increase in DC voltage drives more high-energy ions to the electrode applied to the DC source, which makes the IEDs at the DC electrode shift towards higher energy, and the peaks in the IADs shift towards small angle regions. At the same time, it also decreases the ion energy at the RF electrode and enlarges the incident angles of the ions, which strike the RF electrode.展开更多
We have developed a plasma etching simulator to investigate the evolution of pattern profiles in SiO2 material under different plasma conditions. This model focuses on energy and angular dependent etching yield (phys...We have developed a plasma etching simulator to investigate the evolution of pattern profiles in SiO2 material under different plasma conditions. This model focuses on energy and angular dependent etching yield (physical sputtering in this paper), neutral and ion angular distributions, and reflection of ions or neutrals on the surface of a photoresist or SiO2. The effect of positive charge accumulation on the surface of insulated mask or SiO2 is studied and the charge accumulation contributes to a deflection of ion trajectory. The wafer profile evolution has been simulated using a cellular-automata-like method under radio-frequency (RF) bias and direct-current (DC) bias, respectively. On the basis of the critical role of angular distribution of ions or neutrals, the wafer profile evolution has been simulated for different variances of angles. Observed microtrenching has been well reproduced in the simulator. The ratio of neutrals to ions has been considered and the result shows that because the neutrals are not accelerated by an electric field, their energy is much lower compared with ions, so they are easily reflected on the surface of SiO2, which makes the trench shallower.展开更多
Plasma as the fourth state of matter widely exists in universe and it is the essential state in the process of Initial Confinement Fusion sciences.Ion beam is a unique tool to understand some special properties of pla...Plasma as the fourth state of matter widely exists in universe and it is the essential state in the process of Initial Confinement Fusion sciences.Ion beam is a unique tool to understand some special properties of plasma itself form the aspect of kinetic interaction between ion and plasma surrounding.The energy loss of helium ions in a dense plasma relates to the self-heating process in a ICF capsule and the radiation protection by Van Allen Radiation Belt of Earth-self against the solar wind.It is a very interesting topic to carry out the series of experiments applying the ion beam and plasma target together in lab[1,2].展开更多
High energy density is generally defined as a state with energy content larger than 1011 J/m3,or equivalently with pressure higher than 1 Mbar.High energy density matter widely exists in the universe,like the cores of...High energy density is generally defined as a state with energy content larger than 1011 J/m3,or equivalently with pressure higher than 1 Mbar.High energy density matter widely exists in the universe,like the cores of Jupiter,Sun and Earth,as well as inertial confinement fusion.The creation of high energy density state in the laboratory and the research on its properties are very important in astrophysics,planetary sciences,geophysics,inertial fusion sciences and so on.Related to high energy density physics,we carried out a series of research activities including simulation of the state of warm dense matter at HIAF,ion-plasma interaction,highly charged ions induced nanoscale defect on surface and X-ray emission,as well as developing a new multi-channel pyrometer and high energy electron radiography.展开更多
基金supported by the Scientific Foundation from Ministry of Education of China (No.N090305004)Doctor Startup Foundation Program of Liaoning Province (No.20111008)
文摘We developed a one-dimensional hybrid model to simulate the DC/RF combined driven capacitively coupled plasma for argon discharges. The numerical results are used to analyze the influence of the DC source on the plasma density distribution, ion energy distributions (IEDs) and ion angle distributions (IADs) on both the RF and DC electrodes. The increase in DC voltage drives more high-energy ions to the electrode applied to the DC source, which makes the IEDs at the DC electrode shift towards higher energy, and the peaks in the IADs shift towards small angle regions. At the same time, it also decreases the ion energy at the RF electrode and enlarges the incident angles of the ions, which strike the RF electrode.
基金supported by National Natural Science Foundation of China (Nos.11075029 and 10975030)the Important National Science and Technology Specific Project of China (No.2011ZX02403-001)
文摘We have developed a plasma etching simulator to investigate the evolution of pattern profiles in SiO2 material under different plasma conditions. This model focuses on energy and angular dependent etching yield (physical sputtering in this paper), neutral and ion angular distributions, and reflection of ions or neutrals on the surface of a photoresist or SiO2. The effect of positive charge accumulation on the surface of insulated mask or SiO2 is studied and the charge accumulation contributes to a deflection of ion trajectory. The wafer profile evolution has been simulated using a cellular-automata-like method under radio-frequency (RF) bias and direct-current (DC) bias, respectively. On the basis of the critical role of angular distribution of ions or neutrals, the wafer profile evolution has been simulated for different variances of angles. Observed microtrenching has been well reproduced in the simulator. The ratio of neutrals to ions has been considered and the result shows that because the neutrals are not accelerated by an electric field, their energy is much lower compared with ions, so they are easily reflected on the surface of SiO2, which makes the trench shallower.
基金National Key R&D Program of China under(2017YFA0402300)National Natural Science Foundation of China(U1532263,11505248,11775042,11775278)。
文摘Plasma as the fourth state of matter widely exists in universe and it is the essential state in the process of Initial Confinement Fusion sciences.Ion beam is a unique tool to understand some special properties of plasma itself form the aspect of kinetic interaction between ion and plasma surrounding.The energy loss of helium ions in a dense plasma relates to the self-heating process in a ICF capsule and the radiation protection by Van Allen Radiation Belt of Earth-self against the solar wind.It is a very interesting topic to carry out the series of experiments applying the ion beam and plasma target together in lab[1,2].
基金National Natural Science Foundation of China(U1532263,11505248,11375034,11275241,11205225,11105192,11275238).
文摘High energy density is generally defined as a state with energy content larger than 1011 J/m3,or equivalently with pressure higher than 1 Mbar.High energy density matter widely exists in the universe,like the cores of Jupiter,Sun and Earth,as well as inertial confinement fusion.The creation of high energy density state in the laboratory and the research on its properties are very important in astrophysics,planetary sciences,geophysics,inertial fusion sciences and so on.Related to high energy density physics,we carried out a series of research activities including simulation of the state of warm dense matter at HIAF,ion-plasma interaction,highly charged ions induced nanoscale defect on surface and X-ray emission,as well as developing a new multi-channel pyrometer and high energy electron radiography.