近年来,电解锰行业迅猛发展,产生了大量的电解锰渣,如果长期堆积,其渗滤液中含有的锰、砷、氨氮以及其他有毒有害物质会对周围环境的各个圈层造成严重污染,威胁到周边居民的生命安全。本文基于Web of Science Core Collection数据库对2...近年来,电解锰行业迅猛发展,产生了大量的电解锰渣,如果长期堆积,其渗滤液中含有的锰、砷、氨氮以及其他有毒有害物质会对周围环境的各个圈层造成严重污染,威胁到周边居民的生命安全。本文基于Web of Science Core Collection数据库对2008年1月1日—2021年10月27日期间发表的电解锰渣处理处置相关文献进行了分析检索,剔除不相关的文献,总共得到113篇学术论文。借助CiteSpace.6.1.R3软件进行文献计量学可视化分析,绘制知识图谱,总结分析了自2008年以来电解锰渣处理处置的研究现状以及发展趋势。根据研究结果发现,电解锰渣处理处置现状大致可分为资源化和无害化两个方向,资源化处理处置方向中又以建材行业对电解锰渣的消耗量最大,经济、技术可行性较高,具有广阔的应用前景,也是电解锰渣处理处置行业未来的发展趋势。展开更多
There is a great interest in monolithic 4H-SiC Junction Barrier Schottky （JBS） diodes with the capability of a high forward current for industrial power applications. In this paper, we report large-area monolithic 4...There is a great interest in monolithic 4H-SiC Junction Barrier Schottky （JBS） diodes with the capability of a high forward current for industrial power applications. In this paper, we report large-area monolithic 4H-SiC JBS diodes fabricated on a 10 μm 4H-SiC epitaxial layer doped to 6×1015 cm-3. JBS diodes with an active area of 30 mm2 had a forward current of up to 330 A at a forward voltage of 5 V, which corresponds to a current density of 1100 A/cm2. A near ideal breakdown voltage of 1.6 kV was also achieved for a reverse current of up to 100 gA through the use of an optimum multiple floating guard rings （MFGR） termination, which is about 87.2% of the theoretical value. The differential specific-on resistance （RSP-ON） was meas- ured to be 3.3 mΩcm2, leading to a FOM （VB2/RSP-ON） value of 0.78 GW/cm2, which is very close to the theoretical limit of the tradeoff between the specific-on resistance and breakdown voltage for 4H-SiC unipolar devices.展开更多
文摘近年来,电解锰行业迅猛发展,产生了大量的电解锰渣,如果长期堆积,其渗滤液中含有的锰、砷、氨氮以及其他有毒有害物质会对周围环境的各个圈层造成严重污染,威胁到周边居民的生命安全。本文基于Web of Science Core Collection数据库对2008年1月1日—2021年10月27日期间发表的电解锰渣处理处置相关文献进行了分析检索,剔除不相关的文献,总共得到113篇学术论文。借助CiteSpace.6.1.R3软件进行文献计量学可视化分析,绘制知识图谱,总结分析了自2008年以来电解锰渣处理处置的研究现状以及发展趋势。根据研究结果发现,电解锰渣处理处置现状大致可分为资源化和无害化两个方向,资源化处理处置方向中又以建材行业对电解锰渣的消耗量最大,经济、技术可行性较高,具有广阔的应用前景,也是电解锰渣处理处置行业未来的发展趋势。
基金supported by the National Natural Science Foundation of China(Grant Nos.61404098,61176070 and 61274079)the Natural Science Foundation of Shaanxi Province(Grant No.2013JQ8012)+2 种基金Doctoral Fund of Ministry of Education of China(Grant Nos.20110203110010 and 20130203120017)National Key Basic Research Program of China(Grant Nos.2015CB759600)Key Specific Projects of Ministry of Education of China(Grant No.625010101)
文摘There is a great interest in monolithic 4H-SiC Junction Barrier Schottky （JBS） diodes with the capability of a high forward current for industrial power applications. In this paper, we report large-area monolithic 4H-SiC JBS diodes fabricated on a 10 μm 4H-SiC epitaxial layer doped to 6×1015 cm-3. JBS diodes with an active area of 30 mm2 had a forward current of up to 330 A at a forward voltage of 5 V, which corresponds to a current density of 1100 A/cm2. A near ideal breakdown voltage of 1.6 kV was also achieved for a reverse current of up to 100 gA through the use of an optimum multiple floating guard rings （MFGR） termination, which is about 87.2% of the theoretical value. The differential specific-on resistance （RSP-ON） was meas- ured to be 3.3 mΩcm2, leading to a FOM （VB2/RSP-ON） value of 0.78 GW/cm2, which is very close to the theoretical limit of the tradeoff between the specific-on resistance and breakdown voltage for 4H-SiC unipolar devices.
