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一种苝酰亚胺Pb^(2+)荧光探针的合成及其选择性识别
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作者 付丽娜 刘畅 +2 位作者 王照先 康子林 庞榕 《化学世界》 CAS 2024年第6期382-387,共6页
以四氯苝酐、3-氨甲基吡啶为原料,设计并合成了一种可选择性识别Pb^(2+)的新型苝酰亚胺类荧光探针N,N-(吡啶-3-甲基)-1,6,7,12-四氯-3,4:9,10-苝二酰亚胺(PDI-MBD)。采用质谱、核磁等检测手段对其分子结构进行了表征,通过紫外和荧光光... 以四氯苝酐、3-氨甲基吡啶为原料,设计并合成了一种可选择性识别Pb^(2+)的新型苝酰亚胺类荧光探针N,N-(吡啶-3-甲基)-1,6,7,12-四氯-3,4:9,10-苝二酰亚胺(PDI-MBD)。采用质谱、核磁等检测手段对其分子结构进行了表征,通过紫外和荧光光谱法对目标化合物PDI-MBD在N-甲基-2-吡啶烷酮(NMP)/H2O溶液中,对Pb^(2+)的识别性能进行了研究,其光谱性能和对Pb^(2+)识别研究显示,探针PDI-MBD自身的荧光较弱,但与金属离子Pb^(2+)配位反应后荧光显著增强,为配位反应前的10倍,但随着时间的延长,之后又出现荧光猝灭的现象。探针PDI-MBD表现出对溶液中的Pb^(2+)具有良好的选择性识别,且灵敏度高。研究发现,Pb^(2+)在0.1×10^(-5)~5×10^(-5)mol/L的浓度范围内与探针的荧光强度存在良好的线性关系;Pb^(2+)的最低检测限为0.5×10^(-6)mol/L。抗干扰试验证明加入其他常见金属离子后,探针PDI-MBD对Pb^(2+)的荧光信号无显著变化,不易受其他金属离子的影响。说明PDI-MBD可作为Pb^(2+)荧光探针,具有较优的选择性和较强的灵敏度,建立了一种检测Pb^(2+)的分析方法。 展开更多
关键词 苝酰亚胺 荧光探针 选择性 Pb^(2+)
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Subsurface damage and bending strength analysis for ultra-thin and flexible silicon chips 被引量:1
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作者 JIAN Wei wang zhaoxian +3 位作者 JIN Peng ZHU Longji CHEN Ying FENG Xue 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2023年第1期215-222,共8页
Subsurface damage(SSD) is an unavoidable problem in the precision mechanical grinding for preparing ultra-thin and flexible silicon chips. At present, there are relatively few studies on the relationship between SSD a... Subsurface damage(SSD) is an unavoidable problem in the precision mechanical grinding for preparing ultra-thin and flexible silicon chips. At present, there are relatively few studies on the relationship between SSD and the bending strength of ultra-thin chips under different grinding parameters. In this study, SSD including amorphization and dislocation is observed using a transmission electron microscope. Theoretical predictions of the SSD depth induced by different processing parameters are in good agreement with experimental data. The main reasons for SSD depth increase include the increase of grit size, the acceleration of feed rate, and the slowdown of wheel rotation speed. Three-point bending test is adopted to measure the bending strength of ultra-thin chips processed by different grinding conditions. The results show that increasing wheel rotation speed and decreasing grit size and feed rate will improve the bending strength of chips, due to the reduction of SSD depth. Wet etching and chemical mechanical polishing(CMP) are applied respectively to remove the SSD induced by grinding, and both contribute to providing a higher bending strength, but in comparison, CMP works better due to a smooth surface profile. This research aims to provide some guidance for optimizing the grinding process and fabricating ultra-thin chips with higher bending strength. 展开更多
关键词 ultra-thin chip flexible chip subsurface damage bending strength mechanical grinding
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