The change of electrical performances of silicon-germanium (SiGe)heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied as afunction of reactor fast neutron radiation fluence. Alt...The change of electrical performances of silicon-germanium (SiGe)heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied as afunction of reactor fast neutron radiation fluence. Alter neutron irradiation, the collector currentI_c and the current gain beta decrease, and the base current I_b increases generally for SiGe HBT.The higher the neutron irradiation fluence is, the larger I_b increases. For conventional Si BJT,I_c and I_b increase as well as beta decreases much larger than SiGe HBT at the same fluence. It isshown that SiGe HBT has a larger anti-radiation threshold and better anti-radiation performance thanSi BJT. The mechanism of performance changes induced by irradiation was preliminarily discussed.展开更多
The DC characteristics of SiGe HBT irradiated at different electron dose havebeen studied in a comparison with those of Si B JT. Generally, I_b and I_b - I_(b0) increase, I_c,I_c -I_(c0) and its +/- transition V_(be) ...The DC characteristics of SiGe HBT irradiated at different electron dose havebeen studied in a comparison with those of Si B JT. Generally, I_b and I_b - I_(b0) increase, I_c,I_c -I_(c0) and its +/- transition V_(be) as well as DC current gain ft decreases with increasingdose; increase of I_b -I_(b0) with increasing dose for Si BIT is much larger than that for SiGe HBT;beta increases with V_(be) or I_b, but decreases at I_b < 0.25 mA with I_b, and congregates athigher dose; and a damage factor d(beta) is much less at the same dose for SiGe HBT than for Si BJT.SiGe HBT has much better anti-radiation performance than Si BJT. Some anomalous phenomena forincrease of I_c, I_c -I_(c0), I_b -I_(b0) and beta at low dose have been found. Some electron trapshave been measured. The mechanism of changes of characteristics is discussed.展开更多
文摘The change of electrical performances of silicon-germanium (SiGe)heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied as afunction of reactor fast neutron radiation fluence. Alter neutron irradiation, the collector currentI_c and the current gain beta decrease, and the base current I_b increases generally for SiGe HBT.The higher the neutron irradiation fluence is, the larger I_b increases. For conventional Si BJT,I_c and I_b increase as well as beta decreases much larger than SiGe HBT at the same fluence. It isshown that SiGe HBT has a larger anti-radiation threshold and better anti-radiation performance thanSi BJT. The mechanism of performance changes induced by irradiation was preliminarily discussed.
文摘The DC characteristics of SiGe HBT irradiated at different electron dose havebeen studied in a comparison with those of Si B JT. Generally, I_b and I_b - I_(b0) increase, I_c,I_c -I_(c0) and its +/- transition V_(be) as well as DC current gain ft decreases with increasingdose; increase of I_b -I_(b0) with increasing dose for Si BIT is much larger than that for SiGe HBT;beta increases with V_(be) or I_b, but decreases at I_b < 0.25 mA with I_b, and congregates athigher dose; and a damage factor d(beta) is much less at the same dose for SiGe HBT than for Si BJT.SiGe HBT has much better anti-radiation performance than Si BJT. Some anomalous phenomena forincrease of I_c, I_c -I_(c0), I_b -I_(b0) and beta at low dose have been found. Some electron trapshave been measured. The mechanism of changes of characteristics is discussed.
