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Mechanisms of enhanced sub-bandgap absorption in high-speed all-silicon avalanche photodiodes
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作者 YUAN YUAN wayne v.sorin +6 位作者 DI LIANG STANLEY CHEUNG YIWEI PENG MUDIT JAIN ZHIHONG HUANG MARCO FIORENTINO RAYMOND G.BEAUSOLEIL 《Photonics Research》 SCIE EI CAS CSCD 2023年第2期337-346,共10页
All-silicon (Si) photodiodes have drawn significant interest due to their single and simple material system and perfect compatibility with complementary metal-oxide semiconductor photonics. With the help from a cavity... All-silicon (Si) photodiodes have drawn significant interest due to their single and simple material system and perfect compatibility with complementary metal-oxide semiconductor photonics. With the help from a cavity enhancement effect, many of these photodiodes have shown considerably high responsivity at telecommunication wavelengths such as 1310 nm, yet the mechanisms for such high responsivity remain unexplained. In this work,an all-Si microring is studied systematically as a photodiode to unfold the various absorption mechanisms.At-6.4 V, the microring exhibits responsivity up to0.53 A∕W with avalanche gain, a 3 dB bandwidth of25.5 GHz, and open-eye diagrams up to 100 Gb/s. The measured results reveal the hybrid absorption mechanisms inside the device. A comprehensive model is reported to describe its working principle, which can guide future designs and make the all-Si microring photodiode a promising building block in Si photonics. 展开更多
关键词 Gb/s AVALANCHE ABSORPTION
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