针对注塑机螺杆长期受到的高黏度熔融塑料流体挤压发生塑性变形,降低螺杆寿命的问题,以1600 k N注塑机螺杆熔融段为研究对象,进行正交试验分析,在提高螺杆寿命的同时,保证了螺杆注射效率。以螺杆导程、棱宽和槽深为变量,以螺杆熔融段轴...针对注塑机螺杆长期受到的高黏度熔融塑料流体挤压发生塑性变形,降低螺杆寿命的问题,以1600 k N注塑机螺杆熔融段为研究对象,进行正交试验分析,在提高螺杆寿命的同时,保证了螺杆注射效率。以螺杆导程、棱宽和槽深为变量,以螺杆熔融段轴向流速、最大等效应力、最大变形以及最大容量为评价指标,经过设计正交试验,运用ANSYS Fluent以一种低密度聚乙烯为塑料流体材料进行单向流固耦合分析。结果表明,当螺杆导程为50 mm、棱宽为3.6 mm、槽深为3 mm时的优化效果最佳,与优化前相比,轴向流速提高了6%,等效应力降低了26%,最大变形降低了18%,最大容量提升了3%。优化后,螺杆等效应力和变形较小,流体轴向流速更快、流体最大容量更高。展开更多
The introduction of strain In_(x)Ga_(1-x)As channel with high In content increases the confinement of the two-dimensional electron gas(2DEG)and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMT...The introduction of strain In_(x)Ga_(1-x)As channel with high In content increases the confinement of the two-dimensional electron gas(2DEG)and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs.The effect of In_(x)Ga_(1-x)As channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been investigated.The experiment results show that,after the same high electron irradiation dose,the 2DEG mobility and density in InP-based HEMT structures with strain In_(x)Ga_(1-x)As(x>0.53)channel decrease more dramatically than that without strain In_(0.53)Ga_(0.47)As channel.Moreover,the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the In_(x)Ga_(1-x)As channel.The research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs.展开更多
基金National Natural Science Foundation of China(11705277)Science and Technology Research Project of Hubei Provincial Department of Education(Q20222607)Graduate Quality Engineering Support Project of Hubei University of Arts and Science(YZ3202405)。
文摘The introduction of strain In_(x)Ga_(1-x)As channel with high In content increases the confinement of the two-dimensional electron gas(2DEG)and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs.The effect of In_(x)Ga_(1-x)As channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been investigated.The experiment results show that,after the same high electron irradiation dose,the 2DEG mobility and density in InP-based HEMT structures with strain In_(x)Ga_(1-x)As(x>0.53)channel decrease more dramatically than that without strain In_(0.53)Ga_(0.47)As channel.Moreover,the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the In_(x)Ga_(1-x)As channel.The research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs.
