Strained InGaAs/GaAs quantum well (QW) was grown by low-pressuremetallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer wereintroduced to improve the photoluminescence (PL) perform...Strained InGaAs/GaAs quantum well (QW) was grown by low-pressuremetallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer wereintroduced to improve the photoluminescence (PL) performance of the InGaAs/GaAs quantum well. GoodPL results were obtained under condition of growth an interruption of 10 s combined with a moderatestrain buffer layer. Wavelength lasers of 1064 nm using the QW were grown and processed intodevices. Broad area lasers (100 μm x 500 μm) show very low threshold current densities (43 A/cm^2)and high slop efficiency (0.34 W/A, per facet).展开更多
文摘Strained InGaAs/GaAs quantum well (QW) was grown by low-pressuremetallorganic chemical vapor deposition (MOCVD). Growth interruption and strain buffer layer wereintroduced to improve the photoluminescence (PL) performance of the InGaAs/GaAs quantum well. GoodPL results were obtained under condition of growth an interruption of 10 s combined with a moderatestrain buffer layer. Wavelength lasers of 1064 nm using the QW were grown and processed intodevices. Broad area lasers (100 μm x 500 μm) show very low threshold current densities (43 A/cm^2)and high slop efficiency (0.34 W/A, per facet).
