The combination of ferromagnetic metal(FM)and semiconductor(SC)for spin injection was studied and demonstrated with FM-SC-FM junction.The semiconductor was chosen to be doped Indium-Tin-Oxide(ITO).Both ITO single-laye...The combination of ferromagnetic metal(FM)and semiconductor(SC)for spin injection was studied and demonstrated with FM-SC-FM junction.The semiconductor was chosen to be doped Indium-Tin-Oxide(ITO).Both ITO single-layer film and CoFe-ITO-CoFe junction were sputtering deposited.The ITO single-layer film was n-type with a small resistance of about 100Ω/Square.I-V curves and Magnetoresistance(MR)effect of the CoFe-ITO-CoFe junction were measured at room temperature and 77 K.Results show that the CoFe forms an ohmic contact to ITO film.But at low temperature,the I-V curves show a Schottky-like characteristic,which is strongly affect by applied magnetic field.The MR effect was measured to be 1%at 77 K,which indicates a spin injection into semiconductor to be realized in this sandwich junction.展开更多
基金This project was financially supported by the Key Program of NSFC(No.90306015).
文摘The combination of ferromagnetic metal(FM)and semiconductor(SC)for spin injection was studied and demonstrated with FM-SC-FM junction.The semiconductor was chosen to be doped Indium-Tin-Oxide(ITO).Both ITO single-layer film and CoFe-ITO-CoFe junction were sputtering deposited.The ITO single-layer film was n-type with a small resistance of about 100Ω/Square.I-V curves and Magnetoresistance(MR)effect of the CoFe-ITO-CoFe junction were measured at room temperature and 77 K.Results show that the CoFe forms an ohmic contact to ITO film.But at low temperature,the I-V curves show a Schottky-like characteristic,which is strongly affect by applied magnetic field.The MR effect was measured to be 1%at 77 K,which indicates a spin injection into semiconductor to be realized in this sandwich junction.
