The monolithic integration of soliton microcomb devices with active photonic components and high-frequency electronics is highly desirable for practical applications. Among many materials, silicon nitride(SiN_(x)) wav...The monolithic integration of soliton microcomb devices with active photonic components and high-frequency electronics is highly desirable for practical applications. Among many materials, silicon nitride(SiN_(x)) waveguide layers prepared by low-pressure chemical vapor deposition(LPCVD) have been the main platform for on-chip optical frequency comb generation. However, the high temperatures involved in LPCVD render it incompatible as a back-end process with complementary metal oxide semiconductor(CMOS) or active Ⅲ-Ⅴ compound semiconductor fabrication flows. We report the generation of coherent soliton frequency combs in micro-ring resonators fabricated in deuterated silicon nitride(SiN_(x):D) waveguides with a loss of 0.09 d B/cm. Deposited at 270℃ by an inductance-coupled plasma chemical vapor deposition(ICP-CVD) process, the material preparation and fabrication flow are fully CMOS-compatible. These results enable the integration of silicon-nitride-based optical combs and photonic integrated circuits(PICs) on prefabricated CMOS and/or Ⅲ-Ⅴ substrates, therefore marking a major step forward in Si Nxphotonic technologies.展开更多
Although many modeling approaches exist for analyzing the behavior of capacitive micro-machined ultrasonic transducers （CMUTs）, the relation equation between the design pa- rameters with input and output is still la...Although many modeling approaches exist for analyzing the behavior of capacitive micro-machined ultrasonic transducers （CMUTs）, the relation equation between the design pa- rameters with input and output is still lacking. What there is can only be used to analyze the dynamic performance of CMUT indirectly and qualitatively, such as stiffness and sound pressure. A lumped-parameter theoretical model based on the dynamic theory is proposed in this paper. The relation equations between the design parameters with inputs and outputs are given. The results obtained by the proposed model agree well with those by finite element method （FEM） simulation. The dynamic and static behavior of CMUT can be clearly depicted, which is helpful for design and optimization iterations. This shows that the proposed model makes it easier to optimize the parameters of a CMUT with respect to output and bandwidth directly and to better understand the influence of each parameter.展开更多
基金National Natural Science Foundation of China(61975243)Basic and Applied Basic Research Foundation of Guangdong Province(2019A1515010858,2021B1515020093)+2 种基金Science and Technology Program of Guangzhou(202103030001)Science and Technology Planning Project of Guangdong Province(2018B010114002)Local Innovative and Research Teams Project of Guangdong Pearl River Talents Program(2017BT01X121).
文摘The monolithic integration of soliton microcomb devices with active photonic components and high-frequency electronics is highly desirable for practical applications. Among many materials, silicon nitride(SiN_(x)) waveguide layers prepared by low-pressure chemical vapor deposition(LPCVD) have been the main platform for on-chip optical frequency comb generation. However, the high temperatures involved in LPCVD render it incompatible as a back-end process with complementary metal oxide semiconductor(CMOS) or active Ⅲ-Ⅴ compound semiconductor fabrication flows. We report the generation of coherent soliton frequency combs in micro-ring resonators fabricated in deuterated silicon nitride(SiN_(x):D) waveguides with a loss of 0.09 d B/cm. Deposited at 270℃ by an inductance-coupled plasma chemical vapor deposition(ICP-CVD) process, the material preparation and fabrication flow are fully CMOS-compatible. These results enable the integration of silicon-nitride-based optical combs and photonic integrated circuits(PICs) on prefabricated CMOS and/or Ⅲ-Ⅴ substrates, therefore marking a major step forward in Si Nxphotonic technologies.
基金Project partially supported by the following foundations:the National S&T Key Project in China (No. 2009ZX03006-001-01)the Fundamental Research Program of Shenzhen (No. JC201005270363A)the Key Project of Fundamental Research Program of Shenzhen (No. JC201104220265A)
文摘Although many modeling approaches exist for analyzing the behavior of capacitive micro-machined ultrasonic transducers （CMUTs）, the relation equation between the design pa- rameters with input and output is still lacking. What there is can only be used to analyze the dynamic performance of CMUT indirectly and qualitatively, such as stiffness and sound pressure. A lumped-parameter theoretical model based on the dynamic theory is proposed in this paper. The relation equations between the design parameters with inputs and outputs are given. The results obtained by the proposed model agree well with those by finite element method （FEM） simulation. The dynamic and static behavior of CMUT can be clearly depicted, which is helpful for design and optimization iterations. This shows that the proposed model makes it easier to optimize the parameters of a CMUT with respect to output and bandwidth directly and to better understand the influence of each parameter.
