Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si.Variable-energy(0-20 keV)positrons were implanted into samples at different depths.The Doppler broadening of the annihilation ...Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si.Variable-energy(0-20 keV)positrons were implanted into samples at different depths.The Doppler broadening of the annihilation γ-ray energy spectra measured at a number of different incident positron energies is characterized by a line-shape parameter,S.It was found that the measured S parameters are sensitive to thin film reaction and crystalline characteristics.In particular,the S parameter of epitavial CoSi_(2)formed by the ternary reaction is quite different from that of the polycrystalline CoSi_(2)formed by direct reaction of Co with Si.展开更多
文摘Slow positron beam was used to investigate the solid state reaction of Co/Si and Co/Ti/Si.Variable-energy(0-20 keV)positrons were implanted into samples at different depths.The Doppler broadening of the annihilation γ-ray energy spectra measured at a number of different incident positron energies is characterized by a line-shape parameter,S.It was found that the measured S parameters are sensitive to thin film reaction and crystalline characteristics.In particular,the S parameter of epitavial CoSi_(2)formed by the ternary reaction is quite different from that of the polycrystalline CoSi_(2)formed by direct reaction of Co with Si.
