Low-intensity light detection necessitates high-responsivity photodetectors.To achieve this,we report In_(0.53)Ga_(0.47)As∕In As∕In_(0.53)Ga_(0.47)As quantum well(InAs QW)photo-field-effect-transistors(photo-FETs)in...Low-intensity light detection necessitates high-responsivity photodetectors.To achieve this,we report In_(0.53)Ga_(0.47)As∕In As∕In_(0.53)Ga_(0.47)As quantum well(InAs QW)photo-field-effect-transistors(photo-FETs)integrated on a Si substrate using direct wafer bonding.Structure of the In As QW channel was carefully designed to achieve higher effective mobility and a narrower bandgap compared with a bulk In_(0.53)Ga_(0.47)As,while suppressing the generation of defects due to lattice relaxations.High-performance 2.6 nm In As QW photo-FETs were successfully demonstrated with a high on/off ratio of 10~5 and a high effective mobility of 2370 cm^(2)∕(V·s).The outstanding transport characteristics in the InAs QW channel result in an optical responsivity 1.8 times greater than InGaAs photo-FETs and the fast rising/falling times.Further,we experimentally confirmed that the InAs QW photo-FET can detect light in the short-wavelength infrared(SWIR;1.0–2.5μm)near 2μm thanks to bandgap engineering through In As QW structures.Our result suggests that the InAs QW photo-FET is promising for high-responsivity and extended-range SWIR photodetector applications.展开更多
We present an accurate, easy-to-use large-signal SPICE circuit model for depletion-type silicon ring modulators(Si RMs). Our model includes both the electrical and optical characteristics of the Si RM and consists of ...We present an accurate, easy-to-use large-signal SPICE circuit model for depletion-type silicon ring modulators(Si RMs). Our model includes both the electrical and optical characteristics of the Si RM and consists of circuit elements whose values change depending on modulation voltages. The accuracy of our model is confirmed by comparing the SPICE simulation results of 25 Gb/s non-return-to-zero(NRZ) modulation with the measurement. The model is used for performance optimization of monolithically integrated Si photonic NRZ and pulse-amplitudemodulation 4 transmitters in the standard SPICE circuit design environment.展开更多
We demonstrate a new technique of measuring differential carrier lifetime and linewidth enhancement factor in a semiconductor optical amplifier. In our method, the optical responses and fiber transfer functions of a s...We demonstrate a new technique of measuring differential carrier lifetime and linewidth enhancement factor in a semiconductor optical amplifier. In our method, the optical responses and fiber transfer functions of a self-gain modulated SOA are measured and, from these, values of carrier lifetimes and linewidth enhancement factors are determined for various SOA input optical powers.展开更多
We demonstrate a silicon electronic–photonic integrated 25 Gb/s nonreturn-to-zero transmitter that includes driver circuits,depletion-type Si ring modulator,Ge photodetector,temperature sensor,on-chip heater,and temp...We demonstrate a silicon electronic–photonic integrated 25 Gb/s nonreturn-to-zero transmitter that includes driver circuits,depletion-type Si ring modulator,Ge photodetector,temperature sensor,on-chip heater,and temperature controller,all monolithically integrated on a 0.25μm photonic BiCMOS technology platform.The integrated transmitter successfully provides stable and optimal 25 Gb/s modulation characteristics against external temperature fluctuation.展开更多
We experimentally observe that Si micro-ring modulator(MRM) modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature ...We experimentally observe that Si micro-ring modulator(MRM) modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature increase caused by dynamic power dissipation within the Si MRM device. We also quantitatively determine the amount of Si MRM resonance wavelength shift due to different modulation data rates, data patterns, and modulation voltages. Our results should be of great help for achieving reliable and optimal modulation characteristics for Si MRMs.展开更多
基金Institute for Information and Communications Technology Promotion(2022-0-00208)National Research Foundation of Korea(2022M3F3A2A01065057,2022R1C1C1007333)Korea Institute of Science and Technology(2E32242)。
文摘Low-intensity light detection necessitates high-responsivity photodetectors.To achieve this,we report In_(0.53)Ga_(0.47)As∕In As∕In_(0.53)Ga_(0.47)As quantum well(InAs QW)photo-field-effect-transistors(photo-FETs)integrated on a Si substrate using direct wafer bonding.Structure of the In As QW channel was carefully designed to achieve higher effective mobility and a narrower bandgap compared with a bulk In_(0.53)Ga_(0.47)As,while suppressing the generation of defects due to lattice relaxations.High-performance 2.6 nm In As QW photo-FETs were successfully demonstrated with a high on/off ratio of 10~5 and a high effective mobility of 2370 cm^(2)∕(V·s).The outstanding transport characteristics in the InAs QW channel result in an optical responsivity 1.8 times greater than InGaAs photo-FETs and the fast rising/falling times.Further,we experimentally confirmed that the InAs QW photo-FET can detect light in the short-wavelength infrared(SWIR;1.0–2.5μm)near 2μm thanks to bandgap engineering through In As QW structures.Our result suggests that the InAs QW photo-FET is promising for high-responsivity and extended-range SWIR photodetector applications.
基金Ministry of Trade,Industry and Energy(MOTIE)(10065666)Yonsei University(Research Scholarship Grants)IC Design Education Center(IDEC)
文摘We present an accurate, easy-to-use large-signal SPICE circuit model for depletion-type silicon ring modulators(Si RMs). Our model includes both the electrical and optical characteristics of the Si RM and consists of circuit elements whose values change depending on modulation voltages. The accuracy of our model is confirmed by comparing the SPICE simulation results of 25 Gb/s non-return-to-zero(NRZ) modulation with the measurement. The model is used for performance optimization of monolithically integrated Si photonic NRZ and pulse-amplitudemodulation 4 transmitters in the standard SPICE circuit design environment.
文摘We demonstrate a new technique of measuring differential carrier lifetime and linewidth enhancement factor in a semiconductor optical amplifier. In our method, the optical responses and fiber transfer functions of a self-gain modulated SOA are measured and, from these, values of carrier lifetimes and linewidth enhancement factors are determined for various SOA input optical powers.
基金Ministry of Trade,Industry and Energy(10065666)National Research Foundation of Korea(2020R1A2C201508911)Yonsei University.
文摘We demonstrate a silicon electronic–photonic integrated 25 Gb/s nonreturn-to-zero transmitter that includes driver circuits,depletion-type Si ring modulator,Ge photodetector,temperature sensor,on-chip heater,and temperature controller,all monolithically integrated on a 0.25μm photonic BiCMOS technology platform.The integrated transmitter successfully provides stable and optimal 25 Gb/s modulation characteristics against external temperature fluctuation.
基金supported by the National Research Foundation of Korea grant funded by the Korean Ministry of Science,ICT and Future Planning(No.2015R1A2A2A01007772)the Materials andParts Technology R&D Program funded by the Korean Ministry of Trade,Industry&Energy(Project No.10065666)
文摘We experimentally observe that Si micro-ring modulator(MRM) modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature increase caused by dynamic power dissipation within the Si MRM device. We also quantitatively determine the amount of Si MRM resonance wavelength shift due to different modulation data rates, data patterns, and modulation voltages. Our results should be of great help for achieving reliable and optimal modulation characteristics for Si MRMs.