Phase change memory (PCM) cells based on Ge2Sb2Te5 were synthesized and investigated. Currentvoltage measurements demonstrated different final resistances. Transmission electron microscopy (TEM),high resolution electr...Phase change memory (PCM) cells based on Ge2Sb2Te5 were synthesized and investigated. Currentvoltage measurements demonstrated different final resistances. Transmission electron microscopy (TEM),high resolution electron microscopy (HREM) and the energy dispersive X-ray spectroscopy (EDS) analyses were used to characterize the microstructures of the PCM cells. The architectures,structures and defects in the cells including the deposited elemental distributions and the interfacial structures between electrodes and barrier layers were studied in detail.展开更多
基金Supported by the National Basic Research Program of China (Grant No. 2007CB935400)Key Project of Beijing Education Committee Program (Grant No. JB102001200801)Program for New Century Excellent Talents in University (Grant No. 05009015200701)
文摘Phase change memory (PCM) cells based on Ge2Sb2Te5 were synthesized and investigated. Currentvoltage measurements demonstrated different final resistances. Transmission electron microscopy (TEM),high resolution electron microscopy (HREM) and the energy dispersive X-ray spectroscopy (EDS) analyses were used to characterize the microstructures of the PCM cells. The architectures,structures and defects in the cells including the deposited elemental distributions and the interfacial structures between electrodes and barrier layers were studied in detail.