GaInNAs/GaAs single-quantum-well(SQW)lasers have been grown by solid-source molecular beam epitaxy.N is introduced by a home-made dc-active plasma source.Incorporation of N into InGaAs decreases the bandgap significan...GaInNAs/GaAs single-quantum-well(SQW)lasers have been grown by solid-source molecular beam epitaxy.N is introduced by a home-made dc-active plasma source.Incorporation of N into InGaAs decreases the bandgap significantly.The highest N concentration of 2.6%in GaInNAs/GaAs QW is obtained,corresponding to the photoluminescence(PL)peak wavelength of 1.57μm at 10 K.The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations.Rapid thermal annealing at 850℃ could significantly improve the crystal quality of the QWs.An optimum annealing time of 5s at 850℃ was obtained.The GaInNAs/GaAs SQW laser emitting at 1.2μm exhibits a high characteristic temperature of 115 K in the temperature range of 20℃-75℃.展开更多
基金Supported by the Major State Basic Research Program under Grant No.G2000036603the National Natural Science Foundation of China under Grant Nos.69896260 and 69988005.
文摘GaInNAs/GaAs single-quantum-well(SQW)lasers have been grown by solid-source molecular beam epitaxy.N is introduced by a home-made dc-active plasma source.Incorporation of N into InGaAs decreases the bandgap significantly.The highest N concentration of 2.6%in GaInNAs/GaAs QW is obtained,corresponding to the photoluminescence(PL)peak wavelength of 1.57μm at 10 K.The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations.Rapid thermal annealing at 850℃ could significantly improve the crystal quality of the QWs.An optimum annealing time of 5s at 850℃ was obtained.The GaInNAs/GaAs SQW laser emitting at 1.2μm exhibits a high characteristic temperature of 115 K in the temperature range of 20℃-75℃.
