本文以南瓜为前驱体,通过“水热反应-KOH活化-碳化”制备工艺,制备得到多孔碳材料(429.85 m^2 g^-1)。再通过封闭空间高温烧结的方法,将单质Se熔解-扩散进入多孔C材料中,同时控制活性物质Se的尺寸和形貌,进一步提高Se负载率(51.8%),从...本文以南瓜为前驱体,通过“水热反应-KOH活化-碳化”制备工艺,制备得到多孔碳材料(429.85 m^2 g^-1)。再通过封闭空间高温烧结的方法,将单质Se熔解-扩散进入多孔C材料中,同时控制活性物质Se的尺寸和形貌,进一步提高Se负载率(51.8%),从而获得高性能锂-硒电池正极复合材料。得到C/Se复合材料首圈放电容量超过1000 mAh g^-1,并且100圈后仍能维持在400 mAh g^-1左右。本文制备的C/Se复合材料具有良好的孔径结构,并且电化学性能优异,同时原料来源广泛且廉价,制备工艺简单,为锂-硒电池产业化提供了更大的可能。展开更多
Based on the analysis of typical hybrid-type content addressable memory （CAM） structures, a hybrid-type CAM architecture with lower power consumption and higher stability was proposed. This design changes the connec...Based on the analysis of typical hybrid-type content addressable memory （CAM） structures, a hybrid-type CAM architecture with lower power consumption and higher stability was proposed. This design changes the connection of a N-type metal-oxide-semiconductor （NMOS） transistor in the control circuit, which greatly reduces the power consumption during comparison by making the match line simply discharge to the NMOS threshold voltage. A comparative study was made between conventional and the proposed hybrid-type CAM architecture by semiconductor manufacturing international corporation （SMIC） 65 nm complementary metal-oxide-semiconductor （CMOS） technology. Simulation shows that the power consumption of the proposed structure is reduced by 23%. Furthermore, the proposed design also adjusts the match line （ML） discharge path. In case that, the not and type （NAND-type） block is matched and the not or type （NOR-type） block is mismatched, the jitter voltage on the match line can be decreased largely.展开更多
文摘本文以南瓜为前驱体,通过“水热反应-KOH活化-碳化”制备工艺,制备得到多孔碳材料(429.85 m^2 g^-1)。再通过封闭空间高温烧结的方法,将单质Se熔解-扩散进入多孔C材料中,同时控制活性物质Se的尺寸和形貌,进一步提高Se负载率(51.8%),从而获得高性能锂-硒电池正极复合材料。得到C/Se复合材料首圈放电容量超过1000 mAh g^-1,并且100圈后仍能维持在400 mAh g^-1左右。本文制备的C/Se复合材料具有良好的孔径结构,并且电化学性能优异,同时原料来源广泛且廉价,制备工艺简单,为锂-硒电池产业化提供了更大的可能。
基金supported by the Natural Science Fund for Colleges and Universities in Anhui Province (KJ2013A006)
文摘Based on the analysis of typical hybrid-type content addressable memory （CAM） structures, a hybrid-type CAM architecture with lower power consumption and higher stability was proposed. This design changes the connection of a N-type metal-oxide-semiconductor （NMOS） transistor in the control circuit, which greatly reduces the power consumption during comparison by making the match line simply discharge to the NMOS threshold voltage. A comparative study was made between conventional and the proposed hybrid-type CAM architecture by semiconductor manufacturing international corporation （SMIC） 65 nm complementary metal-oxide-semiconductor （CMOS） technology. Simulation shows that the power consumption of the proposed structure is reduced by 23%. Furthermore, the proposed design also adjusts the match line （ML） discharge path. In case that, the not and type （NAND-type） block is matched and the not or type （NOR-type） block is mismatched, the jitter voltage on the match line can be decreased largely.
