Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion impantation.It is very important for research and application of the ion beammodification of materials. The ...Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion impantation.It is very important for research and application of the ion beammodification of materials. The results showthat the implanted atom diffusion coefficient increases in Mo implanted Al with high ion flux andhigh dose. The implanted depth is 311.6 times greater than that ofthe corresponding ion range. The ionspecies, doses and ion fluxes play an important part in the long-range implantation. Especially,thermal atom chemistry have specific effect on the long-range implantation during high ion fluximplantation at transient high target temperature.展开更多
The TiN coating changed from columnar structure to compact texture after N^(+)and C^(+)implantation.X-ray analysis showed that combining with N atoms,Ti and Ti_(2)N would be transformed into TiN Phases during N implan...The TiN coating changed from columnar structure to compact texture after N^(+)and C^(+)implantation.X-ray analysis showed that combining with N atoms,Ti and Ti_(2)N would be transformed into TiN Phases during N implantation.The ternary solid solution mixtures TiCN have been formed,while Ti,Ti_(2)N would be transformed into TiC and TiCN phases combining with C atoms after C implantation.The hardness of the TiN coating increased by 2.3-2.4 times after N^(+)or C^(+)implantation.The wear resistance of implanted TiN coatings is 2-3 times higher than that of unimplanted TiN coatings.When the drills were treated with the method,their lifetime would increase by 7 times comparing with unimplanted ones.As an attractive procedure,the ion implantation of the TiN coatings would find new applications in many fields.展开更多
Mo ions are implanted into aluminium with a high ion flux and high dose at elevated temperatures of 300℃,400℃and 500℃.X-ray diffraction spectra show that the Al12Mo phases are formed.Rutherford backscattering spect...Mo ions are implanted into aluminium with a high ion flux and high dose at elevated temperatures of 300℃,400℃and 500℃.X-ray diffraction spectra show that the Al12Mo phases are formed.Rutherford backscattering spectroscopy indicates that a profile of Mo appears in Al around the depth of 550nm and with an atomic concentration of~7%,when Mo is implanted to the dose of 3×10^(17)/cm^(2) with an ion flux of 45μA/cm^(2)(400℃).If the dose increases to 1×10^(18)/cm^(2) at the same ion flux,the penetration of Mo ions in Al can reach a depth of 2μm,which is greater than the ion project range Rp(52.5nm).The results show that anomalous diffusion takes place.Owing to the intense atom collision cascades,the diffusion coefficient increases greatly with the increase of the ion flux and dose.The Mo diffusion coefficients in Al are calculated.The Mo retained dose in A1 increases obviously with the increase of the ion flux.展开更多
The relations of variation of lattice stress to shape, peak concentrations of the P atom depth profile and Sb doses of P+Sb dual implantation were studied in high energy P implantation silicon. The experimental result...The relations of variation of lattice stress to shape, peak concentrations of the P atom depth profile and Sb doses of P+Sb dual implantation were studied in high energy P implantation silicon. The experimental results show that the lattice stress in P-implanted silicon obviously increases with increasing ion dose. The stress of P-implanted silicon with the dose of 2×1013/cm2 is 2.2 times greater than at a dose of 3.6×1012/cm2. The stress decreases rapidly as the annealing time increases.It is very interesting that the stress has a negative value when the concentration of P atoms in the implanted layer is below 6×1016/cm3, whereas the stress becomes positive when the concentration is greater than 6×16/cm3. The stress increases rapidly with increasing Sb ion dose after P implantation. The stress has a positive value before annealing. If the Sb dose is below 1 ×1016/cm2, the stress is negative after annealing,and it is positive when the Sb dose is higher than 1×1016/cm2. The stress is close to zero for a Sb implantation dose of 1×1016/cm2. The best compensation dose of Sb to P implantation dose of 3×1016/cm2 is 1×1016/cm2.展开更多
基金The National Natural Science Foundation (Nos.59671051 and 59871003), and tile 863High Technology Program (863-715-023-02-01)
文摘Metal vapor vacuum arc (MEVVA) source ion implantation is a new technology used for achieving long range ion impantation.It is very important for research and application of the ion beammodification of materials. The results showthat the implanted atom diffusion coefficient increases in Mo implanted Al with high ion flux andhigh dose. The implanted depth is 311.6 times greater than that ofthe corresponding ion range. The ionspecies, doses and ion fluxes play an important part in the long-range implantation. Especially,thermal atom chemistry have specific effect on the long-range implantation during high ion fluximplantation at transient high target temperature.
基金Supported by the 863 High Technology Program of China(863-715-023-02-01)the National Natural Science Foundation of China under Grant No.59671051.
文摘The TiN coating changed from columnar structure to compact texture after N^(+)and C^(+)implantation.X-ray analysis showed that combining with N atoms,Ti and Ti_(2)N would be transformed into TiN Phases during N implantation.The ternary solid solution mixtures TiCN have been formed,while Ti,Ti_(2)N would be transformed into TiC and TiCN phases combining with C atoms after C implantation.The hardness of the TiN coating increased by 2.3-2.4 times after N^(+)or C^(+)implantation.The wear resistance of implanted TiN coatings is 2-3 times higher than that of unimplanted TiN coatings.When the drills were treated with the method,their lifetime would increase by 7 times comparing with unimplanted ones.As an attractive procedure,the ion implantation of the TiN coatings would find new applications in many fields.
基金Supported by The National Natural Science Foundation of China under Grant Nos.59671051 and 59871003the 863 High Technology Program of China(863-715-023-02-01).
文摘Mo ions are implanted into aluminium with a high ion flux and high dose at elevated temperatures of 300℃,400℃and 500℃.X-ray diffraction spectra show that the Al12Mo phases are formed.Rutherford backscattering spectroscopy indicates that a profile of Mo appears in Al around the depth of 550nm and with an atomic concentration of~7%,when Mo is implanted to the dose of 3×10^(17)/cm^(2) with an ion flux of 45μA/cm^(2)(400℃).If the dose increases to 1×10^(18)/cm^(2) at the same ion flux,the penetration of Mo ions in Al can reach a depth of 2μm,which is greater than the ion project range Rp(52.5nm).The results show that anomalous diffusion takes place.Owing to the intense atom collision cascades,the diffusion coefficient increases greatly with the increase of the ion flux and dose.The Mo diffusion coefficients in Al are calculated.The Mo retained dose in A1 increases obviously with the increase of the ion flux.
文摘The relations of variation of lattice stress to shape, peak concentrations of the P atom depth profile and Sb doses of P+Sb dual implantation were studied in high energy P implantation silicon. The experimental results show that the lattice stress in P-implanted silicon obviously increases with increasing ion dose. The stress of P-implanted silicon with the dose of 2×1013/cm2 is 2.2 times greater than at a dose of 3.6×1012/cm2. The stress decreases rapidly as the annealing time increases.It is very interesting that the stress has a negative value when the concentration of P atoms in the implanted layer is below 6×1016/cm3, whereas the stress becomes positive when the concentration is greater than 6×16/cm3. The stress increases rapidly with increasing Sb ion dose after P implantation. The stress has a positive value before annealing. If the Sb dose is below 1 ×1016/cm2, the stress is negative after annealing,and it is positive when the Sb dose is higher than 1×1016/cm2. The stress is close to zero for a Sb implantation dose of 1×1016/cm2. The best compensation dose of Sb to P implantation dose of 3×1016/cm2 is 1×1016/cm2.
