GaN film grown on Si substrate was characterized by Rutherford backscattering/Channeling (RBS/C). The experimental results show that the thick- ness of GaN epilayer is about 2.5 μm and the GaN film has a good crystal...GaN film grown on Si substrate was characterized by Rutherford backscattering/Channeling (RBS/C). The experimental results show that the thick- ness of GaN epilayer is about 2.5 μm and the GaN film has a good crystalline quality (Xmin=3.3%). By using channeling angular scanning. the 0.35% of average tetragonal distortion in GaN layer is observed. In addition, the depth profiles of strain in GaN film layer reveal that the strain in GaN film nonlinearly decreases with the increase of film thickness. The strain-free thickness (above 2.5 μm) of GaN film on Si substrate is far below that (150μm) of GaN film on Sapphire.展开更多
基金Supported by National Natural Science Foundation of China under grant(10075072)
文摘GaN film grown on Si substrate was characterized by Rutherford backscattering/Channeling (RBS/C). The experimental results show that the thick- ness of GaN epilayer is about 2.5 μm and the GaN film has a good crystalline quality (Xmin=3.3%). By using channeling angular scanning. the 0.35% of average tetragonal distortion in GaN layer is observed. In addition, the depth profiles of strain in GaN film layer reveal that the strain in GaN film nonlinearly decreases with the increase of film thickness. The strain-free thickness (above 2.5 μm) of GaN film on Si substrate is far below that (150μm) of GaN film on Sapphire.
