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Condensed point defects enhance thermoelectric performance of rare-earth Lu-doped GeTe 被引量:2
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作者 wan-yu lyu Wei-Di Liu +7 位作者 Meng Li Xiao-Lei Shi Min Hong Tianyi Cao Kai Guo Jun Luo Jin Zou Zhi-Gang Chen 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2023年第20期227-233,共7页
Heavy rare-earth element doping can effectively strengthen phonon scattering,suppress the lattice thermal conductivity,and enhance the overall thermoelectric performance of GeTe.However,the large electronegativity dif... Heavy rare-earth element doping can effectively strengthen phonon scattering,suppress the lattice thermal conductivity,and enhance the overall thermoelectric performance of GeTe.However,the large electronegativity difference between rare-earth elements(such as La,Eu,and Gd)and Ge refrains the doping limit of rare-earth elements below 1 mol.%in GeTe.Here,compared with other rare earth elements,Lu was found to have a relatively small radius and electronegativity difference with Ge,which can induce a high doping level in GeTe.The result shows that Lu doping effectively reduces the lattice thermal conductivity from 0.77 W^(−1) m K^(−1) of GeTe to 0.35 W m^(−1) K^(−1) of Ge_(0.98)Lu_(0.02)Te at 673 K,and further induces a high zT value of 1.5 in Ge_(0.98)Lu_(0.02)Te at 673 K.Extra Sb alloying optimizes the carrier concentration from 1.02×10^(21) cm^(−3) of Ge_(0.98)Lu_(0.02)Te to 1.77×10^(20) cm^(−3) of Ge0.90Lu0.02Sb0.08Te,which results in a reasonable power factor of 33.82μW cm^(−1) K^(−2) and a low electrical thermal conductivity of 0.75 W m^(−1) K^(−1) at 673 K in Ge_(0.90)Lu_(0.02)Sb_(0.08)Te.Correspondingly,a peak zT of 1.75 at 673 K and an average zT of 0.92 within the temperature range of 303–723 K are obtained in Ge_(0.9)Lu_(0.02)Sb_(0.08)Te.This study indicates that Lu and Sb co-doping can effectively boost the thermoelectric performance of GeTe-based thermoelectric materials. 展开更多
关键词 THERMOELECTRIC RARE-EARTH Thermal conductivity Carrier concentration
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