GaN高电子迁移率晶体管(high electron mobility transistor,HEMT)作为新一代功率开关器件,越来越多地应用于各类高频电力电子功率变换器中。由于GaN HEMT属于超高频器件,驱动电路设计需要考虑电磁兼容及杂散参数的影响,与以往Si MOSFET...GaN高电子迁移率晶体管(high electron mobility transistor,HEMT)作为新一代功率开关器件,越来越多地应用于各类高频电力电子功率变换器中。由于GaN HEMT属于超高频器件,驱动电路设计需要考虑电磁兼容及杂散参数的影响,与以往Si MOSFET(metal oxide semiconductor field effect transistor)管差异较大。通过实例阐述了GaN HEMT驱动电路设计方法,并通过双脉冲实验验证了在额定电流下,该驱动电路可以控制管子实现可靠开通、关断。最终,搭建了450 W GaN HEMT全桥移相电路实验平台,对比了GaN HEMT与Si MOSFET管在相同的隔离型功率变换器中应用的性能差异。展开更多
Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si(111)substrate is demonstrated,and an InGaN/GaN MQWs solar cell device is fabricated.Photo response measurement of the ...Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si(111)substrate is demonstrated,and an InGaN/GaN MQWs solar cell device is fabricated.Photo response measurement of the solar cell devices shows that the fill factor FF=49.4%,open circuit voltage V_(oc)=0.32 V,and short circuit current J_(sc)=0.07 mA/cm^(2),under AM 1.5 G illumination.In order to analyze the influence of material quality on the performance of solar cells,XRD,SEM and Raman scattering experiments are carried out.It is found that insertion of a proper top AlN layer can effectively improve the material quality,and therefore enhance the photovoltaic performance of the fabricated device.展开更多
Self-assembled InAs quantum wires(QWRs)are fabricated on an InP substrate by solid-source molecular beam epitaxy(SSMBE).Photoluminescence(PL)spectra are investigated in these nanostructures as a function of temperatur...Self-assembled InAs quantum wires(QWRs)are fabricated on an InP substrate by solid-source molecular beam epitaxy(SSMBE).Photoluminescence(PL)spectra are investigated in these nanostructures as a function of temperature.An anomalous enhancement of PL intensity and a temperature insensitive PL emission are observed from InAs nanostructures grown on InP substrates using InAlGaAs as the matrix layer and the origin of this phenomenon is discussed.We attribute the anomalous temperature dependence of photoluminescence to the formation of Al-rich and In-rich region in the InAlGaAs buffer layer and the cap layer.展开更多
A technologically important undoped semi-insulating(SI)GaAs single crystal was successfully grown in the Chinese recoverable satellite as far as we know for the first time by using a similar growth configuration descr...A technologically important undoped semi-insulating(SI)GaAs single crystal was successfully grown in the Chinese recoverable satellite as far as we know for the first time by using a similar growth configuration described previously.The experimental results proved that the space SI GaAs crystals have a lower density of defects and defect-impurity complexes as well as a better uniformity.展开更多
An Inx Ga1_xN/lnN quantum-dot intermediate-band solar cell is calculated by means of solving the Schrodinger equation according to the Kronig-Penney model. Based on particular assumptions, the power conversion efficie...An Inx Ga1_xN/lnN quantum-dot intermediate-band solar cell is calculated by means of solving the Schrodinger equation according to the Kronig-Penney model. Based on particular assumptions, the power conversion efficiency is worked out. The results reveal that the InxGa1- xN/InN quantum-dot intermediate-band solar cell manifests much larger power conversion efficiency than that of p-n junction solar cells, and the power conversion efficiency strongly depends on the size of the quantum dot and the interdot distance.展开更多
文摘GaN高电子迁移率晶体管(high electron mobility transistor,HEMT)作为新一代功率开关器件,越来越多地应用于各类高频电力电子功率变换器中。由于GaN HEMT属于超高频器件,驱动电路设计需要考虑电磁兼容及杂散参数的影响,与以往Si MOSFET(metal oxide semiconductor field effect transistor)管差异较大。通过实例阐述了GaN HEMT驱动电路设计方法,并通过双脉冲实验验证了在额定电流下,该驱动电路可以控制管子实现可靠开通、关断。最终,搭建了450 W GaN HEMT全桥移相电路实验平台,对比了GaN HEMT与Si MOSFET管在相同的隔离型功率变换器中应用的性能差异。
基金Supported by the National Natural Sciences Foundation of China under Grant Nos 61076052 and 60906006the State Key Development Program for Basic Research of China under Grant No 2012CB619303the National High Technology Research and Development Program under Grant No 2011AA050514.
文摘Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si(111)substrate is demonstrated,and an InGaN/GaN MQWs solar cell device is fabricated.Photo response measurement of the solar cell devices shows that the fill factor FF=49.4%,open circuit voltage V_(oc)=0.32 V,and short circuit current J_(sc)=0.07 mA/cm^(2),under AM 1.5 G illumination.In order to analyze the influence of material quality on the performance of solar cells,XRD,SEM and Raman scattering experiments are carried out.It is found that insertion of a proper top AlN layer can effectively improve the material quality,and therefore enhance the photovoltaic performance of the fabricated device.
基金Supported by the National Natural Science Foundation of China under Grant No 60990315the National Basic ResearchProgram of China under Grant No 2006CB604904.
文摘Self-assembled InAs quantum wires(QWRs)are fabricated on an InP substrate by solid-source molecular beam epitaxy(SSMBE).Photoluminescence(PL)spectra are investigated in these nanostructures as a function of temperature.An anomalous enhancement of PL intensity and a temperature insensitive PL emission are observed from InAs nanostructures grown on InP substrates using InAlGaAs as the matrix layer and the origin of this phenomenon is discussed.We attribute the anomalous temperature dependence of photoluminescence to the formation of Al-rich and In-rich region in the InAlGaAs buffer layer and the cap layer.
基金Supported in part by the National Natural Science Foundation of China.
文摘A technologically important undoped semi-insulating(SI)GaAs single crystal was successfully grown in the Chinese recoverable satellite as far as we know for the first time by using a similar growth configuration described previously.The experimental results proved that the space SI GaAs crystals have a lower density of defects and defect-impurity complexes as well as a better uniformity.
文摘An Inx Ga1_xN/lnN quantum-dot intermediate-band solar cell is calculated by means of solving the Schrodinger equation according to the Kronig-Penney model. Based on particular assumptions, the power conversion efficiency is worked out. The results reveal that the InxGa1- xN/InN quantum-dot intermediate-band solar cell manifests much larger power conversion efficiency than that of p-n junction solar cells, and the power conversion efficiency strongly depends on the size of the quantum dot and the interdot distance.