We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs(001)matrix.It is shown that the formation of InAs dots with 1 monolayer(ML)height leads to localization of excit...We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs(001)matrix.It is shown that the formation of InAs dots with 1 monolayer(ML)height leads to localization of exciton under certain submonolayer InAs coverage,which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures.展开更多
We present photoluminescence studies on highly dense two-dimensional electron gases in selectively Siδ-doped GaAs/ln_(0.18)Ga_(0.82) As/Al_(0.25)Ga_(0.75),As quantum wells(Ns=4.24 × 10^(12) cm^(-2)).Five well-re...We present photoluminescence studies on highly dense two-dimensional electron gases in selectively Siδ-doped GaAs/ln_(0.18)Ga_(0.82) As/Al_(0.25)Ga_(0.75),As quantum wells(Ns=4.24 × 10^(12) cm^(-2)).Five well-resolved photoluminescence lines centered at 1.4194,1.4506,1.4609,1.4695 and 1.4808eV were observed,which are attributed to the subband exciton emission.The subband separations clearly exhibit the feature of a typical quantum well with triangle and square potential.These very intensive and sharp luminescence peaks with linewidths of 2.2 to 3.5meV indicate the high quality of the structures.Their dependence on the excitation intensity and temperatures are also discussed.展开更多
文摘We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs(001)matrix.It is shown that the formation of InAs dots with 1 monolayer(ML)height leads to localization of exciton under certain submonolayer InAs coverage,which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures.
文摘We present photoluminescence studies on highly dense two-dimensional electron gases in selectively Siδ-doped GaAs/ln_(0.18)Ga_(0.82) As/Al_(0.25)Ga_(0.75),As quantum wells(Ns=4.24 × 10^(12) cm^(-2)).Five well-resolved photoluminescence lines centered at 1.4194,1.4506,1.4609,1.4695 and 1.4808eV were observed,which are attributed to the subband exciton emission.The subband separations clearly exhibit the feature of a typical quantum well with triangle and square potential.These very intensive and sharp luminescence peaks with linewidths of 2.2 to 3.5meV indicate the high quality of the structures.Their dependence on the excitation intensity and temperatures are also discussed.