CaBi_(4)Ti_(4)O_(15)(CBT)-based Aurivillius high-temperature piezoceramics with different Sb-Mn co-doping amounts were synthesized via the conventional sintering technique.The influences of doping amount on the produc...CaBi_(4)Ti_(4)O_(15)(CBT)-based Aurivillius high-temperature piezoceramics with different Sb-Mn co-doping amounts were synthesized via the conventional sintering technique.The influences of doping amount on the product were studied via their crystal structure,microstructure,and piezoelectric performance.It is found that an appropriate Sb-Mn co-doping amount can effectively optimize the crystal structure and decrease the oxygen vacancy concentration in CBT ceramics,leading to enhanced electrical properties.Optimized electrical performance with a high Curie temperature(TC)of 792℃and a remarkable piezoelectric coefficient(d33)of 25 p C/N were achieved at a doping amount(x)of 0.05.Furthermore,this ceramic is found to exhibit an excellent thermal stability,with d33 retaining 88%of its original value after annealing at 600℃for 2 h.Moreover,this ceramic shows a high electrical resistivity(ρ)of 1.35×10^(8)Ω·cm with a small dielectric loss(tanδ)of 1.7%at 400℃.Because of such outstanding piezoelectric performance,it is believed that these Sb-Mn co-doped CBT ceramics could be potential candidates for high-temperature piezoelectric applications.展开更多
基金financial support from the Key Research and Development Project of Zhejiang Province,China(No.2017C01056)。
文摘CaBi_(4)Ti_(4)O_(15)(CBT)-based Aurivillius high-temperature piezoceramics with different Sb-Mn co-doping amounts were synthesized via the conventional sintering technique.The influences of doping amount on the product were studied via their crystal structure,microstructure,and piezoelectric performance.It is found that an appropriate Sb-Mn co-doping amount can effectively optimize the crystal structure and decrease the oxygen vacancy concentration in CBT ceramics,leading to enhanced electrical properties.Optimized electrical performance with a high Curie temperature(TC)of 792℃and a remarkable piezoelectric coefficient(d33)of 25 p C/N were achieved at a doping amount(x)of 0.05.Furthermore,this ceramic is found to exhibit an excellent thermal stability,with d33 retaining 88%of its original value after annealing at 600℃for 2 h.Moreover,this ceramic shows a high electrical resistivity(ρ)of 1.35×10^(8)Ω·cm with a small dielectric loss(tanδ)of 1.7%at 400℃.Because of such outstanding piezoelectric performance,it is believed that these Sb-Mn co-doped CBT ceramics could be potential candidates for high-temperature piezoelectric applications.